27 results on '"Khan, M. Asif"'
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2. Seismic Microzonation of Islamabad–Rawalpindi Metropolitan Area, Pakistan
3. Reply to “comment on ‘recent developments of the Middle East catalog’”
4. Erratum to: Mapping sediment thickness of Islamabad city using empirical relationships: Implications for seismic hazard assessment
5. Mapping sediment thickness of Islamabad city using empirical relationships: Implications for seismic hazard assessment
6. Recent developments of the Middle East catalog
7. Preparation and Properties of PVC-Silica Composites using Different Catalysts Via Sol-Gel Process
8. Impact of Small Miscuts of (0001) Sapphire on the Growth of AlxGa1-xN/AlN
9. Reliability and degradation modes of 280 nm deep UV LEDs on sapphire
10. Deep Ultraviolet Light Emitting Diodes with Emission below 300 nm
11. Pre-seismic, co-seismic and post-seismic displacements associated with the Bhuj 2001 earthquake derived from recent and historic geodetic data
12. High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes
13. Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition
14. UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells
15. Quaternary AlInGaN MQWs for Ultraviolet LEDs
16. Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures
17. High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates
18. Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
19. The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN
20. Metal contacts to n-type GaN
21. Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes
22. GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
23. Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells
24. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
25. Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance
26. Chemically assisted ion beam etching of gallium nitride
27. Stratigraphic evidence for an early collision between northwest India and Asia
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