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Background Scrub typhus is a mite-borne infectious rickettsial disease that can occur in rural and urban areas, with an especially high prevalence in older populations. This disease causes systemic vasculitis that can invade the central nervous system. Considering these characteristics, here we examined whether scrub typhus was associated with the occurrence of dementia, using large population-based cohort data. Method This population-based cohort study enrolled patients aged 60–89 years using data from the Health Insurance Review and Assessment database of South Korea between 2009 and 2018. We defined scrub typhus and dementia using International Classification of Diseases, Tenth Edition diagnostic codes. The control group was stratified according to age and sex at a ratio of 1:5 to the case group in the study population. The index date was set after 90 days beyond the date of the scrub typhus diagnosis, while the observation period was from the time of the index appointment to December 31, 2020. The primary outcome was newly diagnosed dementia. The secondary outcome was dementia classification, such as Alzheimer’s disease, vascular dementia, and other. All analyses were conducted by matching age, gender, and comorbidity. Results During the observation period, 10,460 of 71,047 (14.7%) people who had a history of scrub typhus versus 42,965 of 355,235 (12.1%) people in the control group, that is, with no history of scrub typhus, were diagnosed with dementia (adjusted hazard ratio, 1.12; 95% confidence interval, 1.10–1.15, p Conclusion In conclusion, a history of scrub typhus infection in old age is significantly associated with an increase in dementia, especially Alzheimer’s disease. Our results suggest that prevention and appropriate treatment of scrub typhus should be emphasized as a dementia prevention measure.

Metal chalcogenides have attracted attention as potential thermoelectric materials due to their intrinsically low thermal conductivity arising from their layered structure with weak van der Waals atomic bonding. InSe, one of the post transition metal chalcogenides, also has low thermal conductivity and doping of InSe with elements such as Sn, Si, and As is known to improve the electronic transport properties. Herein, we investigated Te doping in Si-doped InSe (In0.9Si0.1Se) and report enhanced thermoelectric properties, mainly the increased Seebeck coefficient due to the increase in effective mass. Due to the increase in effective mass, the magnitude of the Seebeck coefficient systematically increased with Te doping from 234 µV/K to 405 µV/K. Eventually, the zT at 700 K was enhanced from 0.040 for the pristine sample to 0.069–0.096 for the Te-doped samples.

A new series of proton-conducting solid polymer electrolytes with different compositions, comprising polyvinylpyrrolidone (PVPK40) and polymethylmethacrylate (PMMA) as host polymers, methanesulfonic acid (MSA) as a proton-conducting salt, and alumina (Al2O3) as the nanofiller, were prepared using solution casting. High proton-conducting samples were identified and utilized for the construction of primary proton batteries. The electrical properties of the prepared electrolytes were investigated through AC impedance analysis. The highest proton conductivity (2.51 × 10−5 S/cm) was achieved at room temperature by PMMA-PVPK40-MSA-based blended polymer electrolytes (BS3). The discharge characteristics of filler-dispersed solid polymer electrolytes were better than those of other solid polymer electrolytes. The estimated energy density of the constructed proton battery using solid polymer electrolytes with blended polymers and nanofillers was 0.66 and 3.25 Wh kg−1, respectively.

A simple solution cast route was used to prepare proton conducting solid polymer electrolytes using poly(methyl methacrylate) and poly(vinylpyrrolidone) as polymer hosts and methanesulfonic acid as a proton provider. Fourier transform infrared spectra confirmed functional group interactions between polymers, blended polymers, and acid. Polymer glass transition temperature shifted with increasing acid content in the blend electrolytes provide thermal stability up to 290 °C, verified by differential scanning calorimetry and thermogravimetry analyses. Proton conductivity achieved = 1.16 × 10−4 S/cm at room temperature with an ionic transport number of 0.98. Discharge profiles verified oxidation current

Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. However, the on/off ratio and photoresponsivity of graphene are typically low. Transition metal dichalcogenides (e.g., MoSe2) are semiconductors with high photoresponsivity but lower mobility than that of graphene. Here, we propose a graphene/MoSe2 barristor with a high-k ion-gel gate dielectric. It shows a high on/off ratio (3.3 × 104) and ambipolar behavior that is controlled by an external bias. The barristor exhibits very high external quantum efficiency (EQE, 66.3%) and photoresponsivity (285.0 mA/W). We demonstrate that an electric field applied to the gate electrode substantially modulates the photocurrent of the barristor, resulting in a high gate tuning ratio (1.50 μA/V). Therefore, this barristor shows potential for use as an ambipolar transistor with a high on/off ratio and a gate-tunable photodetector with a high EQE and responsivity. An approach that enhances control over charge carrier movement in graphene-based transistors may be useful in applications such as bendable circuits and light sensors. The difference in current flow when a transistor turns from on to off plays a critical role in determining device performance. Bae Ho Park from Konkuk University in Seoul, South Korea, and colleagues report that stacking graphene on top of another two-dimensional (2D) film of molybdenum selenide can lead to larger on/off current ratios than conventional graphene transistors. Optical and electrical characterizations revealed that the interface between the 2D films created a potential barrier that blocked current flow in the device’s off state without compromising graphene’s mechanical flexibility. Using an external voltage to modulate current flow through the barrier region also allowed the stacked device to serve as a high-efficiency photodetector. we report a field-effect device with a graphene/MoSe2 channel layer and high-k ion-gel gate dielectric. The device shows a high carrier mobility (~247 cm2/V ∙ s), a high on/off ratio (3.3 × 104), and ambipolar behavior that are controlled by an applied gate voltage. The strong gating effect of the device results in higher external quantum efficiency (EQE) (66.3%), photoresponsivity (285.0 mA/W), and gate-tuning ratio (1.50 μA/V) compared to pristine devices. Therefore, our graphene/MoSe2 barristor device can be a suitable candidate for use in ambipolar transistors and gate-tunable broad-area photodetectors.

After publication of the original article [1], we were notified that an author’s name has been incorrectly spelled. Soon You Kwon’s correct full name is Soon Young Kwon.

Delphinidin, gallic acid, betulinic acid, and ursolic acid, which are bio-active ingredients in a variety of fruits, vegetables, and herbs, have potent antioxidant activity and various biological activities. However, it is not clear whether these bio-active ingredients can significantly contribute to the protection of embryonic stem (ES) cells from hypoxia-induced apoptosis. In the present study, hypoxia-induced ES cells apoptosis with time, which were abrogated by pretreatment with all ingredients. Hypoxia-induced ROS generation was blocked by pretreatment with all ingredients in a dose-dependent manner, with the maximum ROS scavenging effect observed for delphinidin. Hypoxia increased phosphorylation of JNK and NF-κB were blocked by pretreatment of delphinidin as well as NAC. Hypoxia decreased phosphorylation of Akt(thr308) and (ser473); these decreases were reversed by pretreatment with delphinidin or NAC. However, Akt inhibition did not affect NF-κB phosphorylation. Delphinidin attenuated the hypoxia-induced increase in Bax, cleaved caspase-9, cleaved caspase-3, and decrease in Bcl-2, which were diminished by pretreatment of Akt inhibitor. Hypoxia induced Bax translocation from the cytosol to mitochondria. Furthermore, hypoxia induced mitochondria membrane potential loss and cytochrome c release in cytosol, which were blocked by delphinidin pretreatment. Hypoxia induced cleavage of procaspase-9 and procaspase-3 which were blocked by delphinidin or SP600125, but Akt inhibitor abolished the protection effect of delphinidin. Moreover, inhibition of JNK and NF-κB abolished hypoxia-induced ES cell apoptosis and inhibition of Akt attenuated delphinidin-induced blockage of apoptosis. The results indicate that delphinidin can prevent hypoxia-induced apoptosis of ES cells through the inhibition of JNK and NF-κB phosphorylation, and restoration of Akt phosphorylation.

Two types of conformal load-bearing antenna structures (CLAS) were designed with microwave composite laminates and Nomex honeycomb cores to secure both the structural rigidity and a good electrical performance. One was a 4 × 8 array for the synthetic-aperture radar (SAR) system and the other was a 5 × 2 array for the wireless local-area network (LAN) system. The design was based on a wide bandwidth, high polarization purity, low losses, and high structural rigidity. The design, fabrication, and structural/electrical performances of the antenna structures were studied. Their flexural behavior was examined by three-point bending, impact, and buckling tests. The electrical measurements were in a good agreement with simulation results. The complex antenna structures obtained have good flexural characteristics. The design of this antenna structure is extended to give a useful guide for sandwich panel manufacturers as well as antenna designers.

A small proportion of cancer cells have stem-cell-like properties, are resistant to standard therapy and are associated with a poor prognosis. The metabolism of such drug-resistant cells differs from that of nearby non-resistant cells. In this study, the metabolism of drug-resistant lung adenocarcinoma cells was investigated. The expression of genes associated with oxidative phosphorylation in the mitochondrial membrane was negatively correlated with the prognosis of lung adenocarcinoma. Because the mitochondrial membrane potential (MMP) reflects the functional status of mitochondria and metastasis is the principal cause of death due to cancer, the relationship between MMP and metastasis was evaluated. Cells with a higher MMP exhibited greater migration and invasion than those with a lower MMP. Cells that survived treatment with cisplatin, a standard chemotherapeutic drug for lung adenocarcinoma, exhibited increased MMP and enhanced migration and invasion compared with parental cells. Consistent with these findings, inhibition of mitochondrial activity significantly impeded the migration and invasion of cisplatin-resistant cells. RNA-sequencing analysis indicated that the expression of mitochondrial complex genes was upregulated in cisplatin-resistant cells. These results suggested that drug-resistant cells have a greater MMP and that inhibition of mitochondrial activity could be used to prevent metastasis of drug-resistant lung adenocarcinoma cells.