1. High-Resolution Electron Microscopy of Interfaces between Solids with Varying Degree of Atomic Ordering
- Author
-
Michael Seibt, N.I. Borgardt, and B. Plikat
- Subjects
Materials science ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Measure (mathematics) ,Molecular physics ,Electronic, Optical and Magnetic Materials ,Degree (temperature) ,law.invention ,Amorphous germanium ,Condensed Matter::Materials Science ,High resolution electron microscopy ,Distribution function ,law ,0103 physical sciences ,General Materials Science ,Crystalline silicon ,Atomic physics ,Electron microscope ,010306 general physics ,0210 nano-technology - Abstract
High-resolution electron microscopy is used to study interfaces between solids with varying degree of atomic ordering. Applying a recently developed technique the structure of amorphous germanium near (111) oriented crystalline silicon is described by its two-dimensional distribution function ρ(x,y) of atoms, and properties of ρ(x,y) are extracted from experimental images. Using extensive image simulations it is further shown that the technique is suitable to measure composition profiles at coherent heterointerfaces.
- Published
- 2004