1. Observing One Interface Trap: Lattice Versus Electron Temperature
- Author
-
Lawrence D. Jackel, Donald M. Tennant, Linus A. Fetter, Richard Howard, R. W. Epworth, and W. J. Skocpol
- Subjects
Condensed Matter::Quantum Gases ,Materials science ,Electron capture ,Transistor ,Electron trapping ,Electron ,Gate voltage ,Computer Science::Other ,law.invention ,Crystallography ,law ,Lattice (order) ,Electron temperature ,Physics::Atomic Physics ,Atomic physics ,Microfabrication - Abstract
Ensemble averages of electron trapping at Si-SiO2 interfaces have long been studied in large devices containing many traps [1]. Now, with advanced microfabrication techniques, it is possible to make MOS transistors small enough to observe individual electron traps [2]. Here we describe some of the kinetics of electron capture and emission from a single trap.
- Published
- 1985