1. Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering.
- Author
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Rasia, L. A., Mansano, R. D., Damiani, L. R., and Viana, C. E.
- Subjects
INDIUM ,TIN ,OXIDES ,THIN films ,PIEZOELECTRIC materials ,RADIO frequency ,MAGNETRONS ,SPUTTERING (Physics) - Abstract
Indium tin oxide (ITO) thin films have been deposited on (100) Si substrates by RF magnetron sputtering from a compact target (90% In
2 O3 –10% SnO2 in weight) with 6 in. in diameter. In order to perform electromechanical characterizations of these films, strain gauges were fabricated. An experimental set-up based on bending beam theory was developed to determine the longitudinal piezoresistive coefficient (πl ) of the strain gauges fabricated. It has been confirmed that electrical resistance of the strain gauges decreases with load increases which results a negative gauge factor. A model based on the activation energy was used to explain the origin of this negative signal. The influence of the temperature on piezoresistive properties of ITO films was also evaluated. [ABSTRACT FROM AUTHOR]- Published
- 2010
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