1. Small signal model parameter extraction for cylindrical silicon-on-insulator Schottky barrier MOSFET.
- Author
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Saxena, Amit, Kumar, Manoj, Sharma, R. K., and Gupta, R. S.
- Subjects
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SCHOTTKY barrier , *ELECTRONIC circuit design , *EQUIVALENT electric circuits , *DIGITAL electronics , *LONG-Term Evolution (Telecommunications) , *ANALOG circuits - Abstract
Small-signal model of the MOSFET is an equivalent circuit of its electric components, which defines the electrical characteristics of a MOSFET. The non-quasi-static (NQS) model is one of the most accurate small-signal models used for designing analog/RF circuits. Electronic circuits designed for advanced high-frequency analog/RF applications like (Long-Term Evolution) LTE and (Internet-of-Things) IoT applications, the proper selection of MOSFET is essential. The MOSFETs with lower static power dissipation and high linearity are best suitable for low-power high-frequency analog/digital circuit applications. In this paper, a cylindrical silicon-on-insulator (SOI) Schottky Barrier (SB) MOSFET is investigated, and analog/RF parameters such as transconductance (gm), intrinsic-voltage gain (AV), ION/IOFF ratio, cutoff-frequency (fT), maximum oscillation frequency (fmax), transconductance-generation factor (TGF), gain-frequency product (GFP), transconductance-frequency product (TFP), gain-bandwidth product (GBWP) and gain-transconductance frequency product (GTFP) are extracted. Also, the NQS small-signal model parameters of SOI-SB MOSFET are extracted for the analog circuit application for the frequency range up to 500 GHz. The analog/RF parameters and NQS small-signal parameters of cylindrical SOI-SB MOSFET are compared with cylindrical SB-MOSFET and cylindrical dielectric-pocket (DP) SB-MOSFET. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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