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The composition of aerosols influenced by regional pollution sources during a post-monsoon haze event was studied including the isotopic, bulk, and molecular signatures. The air mass back trajectory and fire spot analysis revealed that the Delhi aerosols were influenced by the regional post-harvest crop (rice plant) residue-burning activities during the sampling period. To better understand the atmospheric processes during such an event, three samples of 4 h duration each (Period I: from 06:00–10:00, Period II: 10:00–14:00, and Period III: 14:00–18:00 h local time) were collected during the sampling period (8th -17th November, 2019) in the daytime. The average mass concentration of PM2.5, molecular compounds including the inorganic and carbonaceous components (dicarboxylic acid class compounds), along with the stable isotopes of C and N were observed to be elevated during Period I of the study. NH4+ and SO42− were found to be the most abundant inorganic ions during Period II and III with Cl− being the dominant ion during Period I. The OC/EC, WSOC/EC ratios indicated the influence of biomass burning on Delhi aerosols with little influence of local ageing processes evident from the minimal variation observed between the three periods of study during the day. High concentrations of dicarboxylic acids than previous studies are reported with oxalic and succinic acid being the most abundant diacids, a typical behaviour observed in biomass-burning influenced aerosols with an interesting observation of terephthalic acid to be found in an appreciable amount. The δ15 N of TN and δ13 C of TC signatures clearly indicated the influence of emissions from the burning of a C3 plant on the aerosols. The results strongly suggested that the aerosols were influenced by biomass-burning activities in the neighbouring regions and were aged during the atmospheric transport over to the city of Delhi with minimal effect of local ageing processes during the study period. [ABSTRACT FROM AUTHOR]

The two versions of the reference method of sulphur dioxide (SO2) measurement in ambient air (pararosaniline method) available as the Environment Protection Agency (EPA) USA (CFR 40 Part 50, Appendix A) and Bureau of Indian Standards (BIS) India (IS 5182 (Part 2):2001) standard methods were analytically studied. For accuracy and precision of the data obtained, a certain set of specifications should be ascertained before using the method for sample analysis as per the guidelines. On comparing the two methods of operation, the stated set of specifications are fulfilled for the EPA method but not for the BIS method. A different set of specifications were observed for the BIS method (absorbance blank: 0.012 ± 0.001 abs units, slope of calibration curve: 0.014 ± 0.001 abs units/µg SO2, intercept of calibration curve: 0.003 ± 0.002, calibration factor:72.0 ± 4.2). The absorption efficiency as well as the method efficiency of both methods were tested using three different concentrations (0.3 ppm, 0.5 ppm, and 0.8 ppm) of standard SO2 gas. The absorption efficiency of both the methods was found to be 100%. The average method efficiency of the EPA method at 0.3 ppm, 0.5 ppm and 0.8 ppm were found to be 81 ± 8%, 81 ± 6% and 87 ± 1% while that of BIS method was observed to be 91 ± 5%, 93 ± 2%, 89 ± 4% at the respective concentrations. An uncertainty estimation study was also performed considering factors involved in sampling and analysis. A combined uncertainty < 9% and < 7% was observed for EPA and BIS method, respectively. This study presents a comprehensive examination of the operational aspects of two versions of pararosaniline method employed for measuring SO2 in ambient air. The results indicate a need for redefining the specifications outlined in the BIS method. Notably, the BIS method displays greater sensitivity to low blank values compared to the EPA method. Additionally, the study introduces, for the first time, working factors and specifications associated with the BIS method for SO2 measurement. These findings suggest their potential inclusion in the standard method as a means to enhance data quality and reliability in the assessment of SO2 levels in ambient air. [ABSTRACT FROM AUTHOR]

This work investigates a Gate-Stacked negative capacitance field-effect transistor with a high dielectric material layer in the substrate region (GS-NCFET). Also, the effect of different types of spacers is taken into account. Spacers are differentiated based on their dielectric constant, i.e., GS-NCFET with no spacer is denoted as S0, with air spacer is denoted as S1, with SiO2 specified as S2, and with HfO2 noted as S3 device architecture. Self-consistent LCAO-based DFT analysis is done for the spacer materials in terms of band structure, PDOS, and Hartree potential. Further, the switching ratio (Ion/Ioff) is discussed for S0, S1, S2, and S3. Further, the short channel effects (SCEs) like subthreshold swing (SS) and drain-induced barrier lowering (DIBL) are extracted at drain-source voltage (Vds) of 0.5 V. In addition, the voltage transfer characteristic (VTC) curve of GS-NCFET with a spacer-based inverter is considered for digital application purposes, and the transition region is drawn out for all the device architecture-based inverters. Essential parameters like propagation time delay and rise/fall time are evaluated to study the application purposes. In GS-NCFET, a dielectric layer as a buried oxide (BOX) is inserted in the substrate region to reduce the leakage current. [ABSTRACT FROM AUTHOR]

The P-type ATPase superfamily genes are the cation and phospholipid pumps that transport ions across the membranes by hydrolyzing ATP. They are involved in a diverse range of functions, including fundamental cellular events that occur during the growth of plants, especially in the reproductive organs. The present work has been undertaken to understand and characterize the P-type ATPases in the pigeonpea genome and their potential role in anther development and pollen fertility. A total of 59 P-type ATPases were predicted in the pigeonpea genome. The phylogenetic analysis classified the ATPases into five subfamilies: eleven P1B, eighteen P2A/B, fourteen P3A, fifteen P4, and one P5. Twenty-three pairs of P-type ATPases were tandemly duplicated, resulting in their expansion in the pigeonpea genome during evolution. The orthologs of the reported anther development-related genes were searched in the pigeonpea genome, and the expression profiling studies of specific genes via qRT-PCR in the pre- and post-meiotic anther stages of AKCMS11A (male sterile), AKCMS11B (maintainer) and AKPR303 (fertility restorer) lines of pigeonpea was done. Compared to the restorer and maintainer lines, the down-regulation of CcP-typeATPase22 in the post-meiotic anthers of the male sterile line might have played a role in pollen sterility. Furthermore, the strong expression of CcP-typeATPase2 in the post-meiotic anthers of restorer line and CcP-typeATPase46, CcP-typeATPase51, and CcP-typeATPase52 in the maintainer lines, respectively, compared to the male sterile line, clearly indicates their potential role in developing male reproductive organs in pigeonpea. [ABSTRACT FROM AUTHOR]

III-nitride high-electron-mobility transistors (HEMTs) are the optimal choices for high-RF and power applications due to their exceptional performance characteristics. Nevertheless, HEMTs face formidable challenges related to large gate and buffer leakage currents, which inevitably impose significant limitations on device performance and reliability. In response to these challenges, this work studies the design consideration of a T-shaped gate InAlN/AlN with polarized doped buffer HEMT. The simulation results show that the parasitic capacitances are deeply affected by the geometry of the T-gate. The less influence of gate-to-source capacitance (Cgs) by the drain voltage possesses constant depletion charges at the source side, leading to a persistent value of Cgs with drain bias. Moreover, a polarization-doped buffer layer has been incorporated, effectively enhancing the confinement of the two-dimensional electron gas by causing an upward convex bend in the conduction band. This strategic design element significantly contributes to the reduction in leakage current (10−8), positive shift of Vth (0.9 V), and improves the switching ratio (108). The effect of gate head length (Hlength), gate stem height (Sheight), and gate foot length (Flength) on various RF parameters has been investigated. The simulated results confirm that the proper choice of Hlength (280 nm), Sheight (100 nm), and Flength (10 nm) significantly reduced the parasitic capacitance (Cgs = 350 fF/mm and Cgd = 140 fF/mm) and enhanced the Fmax (840 GHz), GBP (636 GHz), Ft (583 GHz) and also improved the power gains. The extracted results of the proposed design exhibit its efficacy for high-performance RF/microwave applications. [ABSTRACT FROM AUTHOR]

Myofibrosarcoma is a distinct mesenchymal malignancy which commonly occurs in head and neck region. It has a high tendency for local recurrence and distant metastasis. 39-year-old male presented with epistaxis, nasal obstruction and left sided complete loss of vision. He underwent functional endoscopic sinus surgery and guided biopsy. MRI scan showed a lesion epicentred in the left maxillary sinus, superiorly extending into the orbit. He underwent Class 4b maxillectomy with neck dissection, tracheostomy and free flap reconstruction. Histopathological examination yielded final diagnosis as myofibrosarcoma of maxilla. The patient was planned for adjuvant radiotherapy and has been disease free for 3 years. [ABSTRACT FROM AUTHOR]

Urbanization and rising populations are contributing significantly to the problem of garbage generation in cities. For a quite long time, big cities all around the world have been particularly concerned about rising waste. For countries with inadequate waste management procedures and faster-rising garbage volumes, this is a severe problem. Many of the waste management systems in use in cities today do not come with features like operational transparency, traceability, audit, security, and trusted data provenance. The way solid waste is managed has evolved as a result of the Internet of Things, Global Positioning System, and cloud computing methods. The research community has also developed numerous waste management methods based on the Internet of Things and blockchain, and machine learning. Using the method of a systematic literature review, this research examines several waste management approaches. Based on the considered 178 research papers, this paper provides the opportunities brought about by the Internet of Things, machine learning, Global Positioning System, and Blockchain in various waste management techniques, their application scenarios, real-time tracing and tracking of waste, reliable channelization and compliance with waste treatment, efficient waste resource management, protection of waste management documentation, and fleet management. Based on the conducted review, this paper presents open challenges associated with waste management techniques that act as future research directions. Waste bin placement and its security, internet connectivity with waste management components, transportation of waste, and waste disposal techniques are the main categories of challenges associated with waste management. This paper also provides a comparison of the presented review with other published review papers. [ABSTRACT FROM AUTHOR]

Venous malformations are low flow endothelial malformations with aberrant and ectatic venous channels. They are defects in vascular growth which causes functional and cosmetic impairment. Gradual growth in size of the lesion occurs due to venous congestion or thrombosis. Venous malformations in parapharyngeal space are a rare entity and are difficult to diagnose. Case Report. 13 year old boy presented with a history of hyposmia and progressive difficulty in breathing for a duration of 2.5 years. MRI face and neck with contrast showed a 4.5 × 4.3x3.6 cm lesion in the left parapharyngeal space. CT angiogram of brain and neck demonstrated a heterogeneously enhancing mass in the left parapharyngeal region. PET scan illustrated an ill-defined mass in the left pre styloid parapharyngeal space. Biopsy from the lesion showed features consistent with venolymphatic malformation. Flexible laryngoscopy showed a bulge over the left soft palate region with narrowing of nasopharyngeal lumen. Patient underwent transoral robotic surgery for complete excision of the mass. Post-operative period was uneventful. He has been on follow up for the past 1 year with no evidence of any residual or recurrent disease. Venolymphatic malformation is a rare lesion in the parapharyngeal space which is difficult to diagnose pre operatively. Surgical excision is the preferred modality of treatment for deep seated lesions in the parapharyngeal space. The advent of transoral robotic surgery have reduced the morbidity and improved clearance for such cases. [ABSTRACT FROM AUTHOR]

The design and analysis of a gate stack gate-all-around junctionless nanowire field-effect transistor (GAA-JL-NWFET) with a catalytic metal as gate contact for oxygen gas sensing is presented in this study. An n-channel GAA-JL-NWFET design using gold (Au) as the gate metal electrode is employed for oxygen sensing by utilizing appropriate work function values, which interact with oxygen gas and change the device's electrical properties. This work focuses on changes in temperature (300–500 K) and Au metal gate work function (5.05–5.20 eV) to investigate the presence of oxygen molecules and their impact on the GAA-JL-NWFET gas sensor performance. Changes in the surface potential, threshold voltage, hole concentration, electron concentration, subthreshold voltage, electric field, and drain current using the ATLAS TCAD simulator are investigated for the adsorption of gas molecules to determine the electrical characteristics of the proposed device. Changes in threshold voltage (Vth), switching ratio, and subthreshold current sensitivity ( S I OFF ) can be considered as sensitivity parameters for sensing oxygen gas molecules. The results reveal that as the Au work function shifts at the gate by 100 mV, the sensitivity ( S I OFF ) enhancement using gate stack GAA-JL-NWFET-based oxygen gas sensors compared to GAA-MOSFET and conventional MOSFET are 15.13% and 88.31%, respectively. Based on our simulation results, the proposed device offers excellent sensitivity, low power consumption, and a fast response time, making it an appropriate candidate for oxygen gas sensing, including environmental monitoring, medical diagnosis, and industrial safety. [ABSTRACT FROM AUTHOR]

Osteosarcomas are rare and highly malignant bone tumours which are composed of malignant mesenchymal cells producing osteoid or immature bone. Maxillary osteosarcomas are rare tumours accounting for less than 1% of head and neck malignancies. Aggressive surgical resection is the main modality of treatment with good reconstruction. Due to the complex anatomy and location of maxilla as well as its proximity to the skull, resection with negative margins is always a challenge and so is the reconstruction so as to reduce the morbidity of the patient and to also give a good functional and cosmetic outcome. Clinical outcomes can be improved with administration of neoadjuvant or adjuvant chemotherapy in selected cases and radiotherapy in case of positive margins. A 41-year-old male patient presented to the outpatient department with complaints of a bulge over the hard palate for the past 1 year. CT scan showed a 6 × 5 × 4 cm osseous expansile lesion arising from the maxillary bone. Biopsy of the tumour showed features of conventional high-grade osteosarcoma. Plate-preserving maxillectomy with tracheostomy was done followed by reconstruction with a double free flap. On post-operative day 1, the flap showed signs of venous congestion and a new free anterolateral thigh flap was done. Patient was discharged on day 7 with a Ryles tube and a tracheostomy tube in situ. Final histopathological examination showed that the tumour was a high-grade chondroblastic osteosarcoma. After regular post-operative visits in the outpatient department and evaluation with flexible laryngoscopy, patient was started on oral feed by day 10 and decannulated by day 15. He has been on regular follow-up for the past 1 year and shows no signs of recurrence or residual disease on clinical examination as well as imaging. Maxillary osteosarcoma is a rare bone tumour which requires accurate imaging and biopsy for accurate surgical planning. The ideal treatment modality is radical resection with negative margins and appropriate reconstruction. With the advent of microvascular surgery, free flaps form the backbone for reconstruction of such large defects. [ABSTRACT FROM AUTHOR]

Two Ni(II) complexes [(Ni L1)(CH3COO) (H2O)2](1) and [{(NiL2) (CH3COO)}2 (µ-H2O)] (2) having different coordination environments around metal centres have been selected to investigate structure-activity correlation for DNA binding and homogenous phosphatase-like activities. Complex 1 is a monomer in which the octahedral Ni(II) center is coordinated to phenolate oxygen along with two nitrogen atoms from imine and amine groups of the deprotonated ligand HL1. An oxygen atom of the acetate group is coordinated in monodentate mode, and two coordinated water molecules occupy the other two axial sites. Complex 2 is a dimer where each Ni(II) centre is coordinated in an octahedral environment through one imine nitrogen, one amine nitrogen, two bridging phenolate oxygens from two deprotonated ligands (HL2) molecules, a mono-dentate acetate group, and a bridging water molecule. The role of structural features of both the complexes has been studied in DNA binding activity and phosphate ester bond cleavage of bis(4-nitrophenyl) phosphate (BNPP) as a model substrate. Complex 2 showed higher DNA binding ability than complex 1 due to its stable bridging structure and high nuclearity. The catalytic phosphate ester bond hydrolysis of BNPP was explored with both complexes spectrophotometrically. The dinuclear complex 2 also exhibited a higher rate of acceleration in the BNPP hydrolysis than mononuclear complex 1. The active nucleophile from the coordinated water and cooperativity in two metal centres of complex 2 are the key features to cleave the phosphate ester bond of the substrate. Further, the first-order rate constants and various kinetic parameters based on the Michaelis-Menten equation were calculated for each complex. A significant phosphatase-like activity for complex 2 has been observed with a turnover number of 1.23 × 10−2 s−1. A structure-activity relationship for phosphatase-like catalytic activities of two mono and di nuclear Ni(II) complexes has been studied. Dinuclear complex 2 exhibits higher phosphatase-like activity due to coordinated water molecules and cooperativity between two metal centres. [ABSTRACT FROM AUTHOR]

Tecoma stans is a widely distributed tall ornamental shrub in the plains of Indian subcontinent and is considered an invasive species across Argentina, Australia, South Africa, Pacific Islands and tropical regions of Asia. Besides having an ornamental significance, T. stans has been extensively investigated for its pharmaceutical applications as a source of bioactive compounds. In addition, the shrub is cultivated commercially as a potted flowering plant. We believe that T. stans, being a hardy, invasive and aggressively growing species, holds a considerable potential and a promising solution for re-greening waste and degraded lands outside its invasive range, due to its wider adaptability and drought tolerant characteristics. The shrub is an excellent source of pollen and nectar, that attracts diverse insect-pollinators and several species of birds. The prudent plantation of this shrub has the potential to restore the ecology of barren landscapes, that can change its perspective of 'being invasive' to 'being ecologically healthy' across the tropical, semi-arid and subtropical regions worldwide. This paper reviews the current updates on ecology, life cycle including morphology, plant growth characteristics, flowering phenology, reproductive biology, breeding system and fruiting of T. stans. In addition, details on insect-pollinator diversity and natural regeneration potential have also been discussed, besides highlighting its therapeutic and landscape use. [ABSTRACT FROM AUTHOR]

Execution grids of developing electronic devices are being examined to find substitutes for MOSFETs in the quest to minimize power dissipation and ease energy efficiency limitations. The innovative architecture of negative capacitance field effect transistors (NCFETs), which offer advantages from the design, performance, and fabrication perspectives, is presented and examined in this article. This proposed structure in this work is called Modified NCFET. Modification of NCFET includes the Density-Functional-Theory (DFT) based atomic modelling for Ferroelectric material Hafnium Oxide (FEHfO2) with different doping concentrations of silicon (Si). The performance metrics of Modified NCFET are compared with conventional MOSFET designed on the same technology node to draw the effect of Si-doped HfO2. DFT calculations like Projected Density of States (PDOS), and energy band structure are done using the Quantum Atomistix Tool Kit (ATK) simulator which is atomic-scale modelling software, and device modelling is done by the Visual Technology-Computer-Aided-Design (TCAD) simulator. The device performance comparison of Modified NCFET and conventional MOSFET is done by the Visual TCAD in terms of short-channel effects (SCEs), analog/RF matrices, and FET-based inverter parameters (noise margin (NM), voltage transfer characteristics (VTC)). Additionally, the proposed NCFET is contrasted with the various FOMs' IRDS criteria. [ABSTRACT FROM AUTHOR]

Introduction: Chondrosarcomas are rare malignancies of the cartilage and myxoid chondrosarcoma is its variant which commonly occurs in soft tissue of extremities. Extraskeletal chondrosarcoma is a rare malignant neoplasm of bone or soft tissue origin and is characterized by the presence of spindle cells admixed with well differentiated cartilage or chondroid stroma. They are mostly radioresistant tumours and surgical resections with adequate margins is considered as the ideal treatment modality with adjuvant radiotherapy in high grade tumours and add on chemotherapy, in case of presence of poor prognostic factors. Case Report: A 51-year-old diabetic, hypertensive female patient presented to our outpatient department with difficulty in chewing food for a duration of 6 months. On clinical examination, she had an ulceroproliferative growth involving right lower alveolus and floor of mouth. MRI face and neck with contrast showed a 4.1 × 2.9 × 4.5 cm lesion involving right lower alveolus extending to floor of mouth. Biopsy showed features of extraskeletal myxoid chondrosarcoma. She was planned for upfront surgery (Right composite resection with modified radical neck dissection with free fibula flap). Patient was stable post-surgery and was discharged in stable condition. Final histopathology report was high grade myxoid chondrosarcoma. The case was presented in tumour board and the patient was planned for adjuvant radiotherapy. She has been on regular follow up for the past 2 years and shows no signs of recurrence. Conclusion: Extraskeletal myxoid chondrosarcoma of oral cavity is a rare entity and very few cases are reported. It is a malignant neoplasm which is diagnosed with the help of immunohistochemistry. Surgery is the ideal modality of treatment accompanied by adjuvant radiotherapy in cases of high-grade tumours. [ABSTRACT FROM AUTHOR]

The present study was undertaken to investigate the dissipation behavior of tembotrione in soil and its effect on the biochemical constituents of maize leaves and grain. The average recovery of tembotrione from soil, maize grain, and stover was in the range of 84.0 to 86.0%, 79.3 to 83.0%, and 81.0 to 84.4%, respectively, with RSD less than 10%. Half-life (DT50) of tembotrione ranged from 9 to 14 days at an application rate of 60 to 240 g ha−1. Terminal residues in soil, maize grain, and stover were below detectable levels (≤ 0.025 µg g−1) at studied application rates. The chemical attributes, i.e., total chlorophyll, total carotenoids, and carbohydrate content, of rice leaves were observed at monthly intervals (zero (2 h), 30, 60 days after the herbicide application) and at harvest for biochemical analysis and grain samples at maturity of the crop for carbohydrate content. The results revealed that total chlorophyll, total carotenoids, and carbohydrate content in maize leaves increased significantly with applied tembotrione treatments, and the maximum increase was noticed in treatment 120 g ha−1. A significant increase in total carbohydrate content in maize grain over the control was noticed in all the herbicide-applied treatments. It can be inferred that the application of tembotrione is safe in the production of food with better quality and food safety. [ABSTRACT FROM AUTHOR]

In this article, a hybrid multi-attribute decision-making (MADM) strategy for the q-rung orthopair fuzzy values (q-ROVs) environment is presented. For this, the q-rung orthopair fuzzy improved weighted geometric (q-ROFIWG) aggregation operator (AO) for aggregating the q-ROVs is proposed. This presented operator can deal with the shortcomings of the existing q-rung orthopair fuzzy weighted geometric (q-ROFWG) AO based on q-ROFVs. The q-ROFIWG AO overcomes the misleading results given by the existing approaches and works on the inefficiency of the existing operators. Additionally, few properties like idempotency, monotonicity, and boundedness are established to show the viability and legitimacy of developed operators. Based on the proposed q-ROFIWG AO, a hybrid MADM approach for the context of q-ROVs is developed. Besides this, an application situation that involves an investment firm to demonstrate the practicality and accuracy of the presented MADM approach is presented. The MADM approach proposed in this article can overcomes the drawbacks of the existing MADM algorithms, where existing MADM algorithms are unable to determine the alternative's ranking order (RO). Finally, a comparison with existing MADM algorithms reveals the efficacy of the new MADM algorithm. [ABSTRACT FROM AUTHOR]

131-I radioactive iodine (RAI) scan is an important modality in the management of differentiated thyroid cancer to detect recurrent or residual disease. Thus it is important to have knowledge about the possibility of false positive findings in these scans to avoid wrongful diagnosis and unnecessary treatment. We here by present a patient who underwent total thyroidectomy with lymph node dissection and followed by radioactive iodine therapy for papillary thyroid cancer. He had 131-I iodine avid nodular lesion in the left parotid gland which was later proven to be oncocytoma on histopathology. False positive findings on radioactive iodine scans are a possibility which should be known to surgeons as well as nuclear medicine physicians for accurate diagnosis and appropriate management. [ABSTRACT FROM AUTHOR]

In this note, we generalize the classical irreducibility criterion of Perron and obtain numerous other new irreducibility criteria for polynomials having integer coefficients. [ABSTRACT FROM AUTHOR]

Extraosseous osteosarcoma is a rare malignant soft tissue neoplasm, and extraosseous osteosarcoma of the parotid gland is very rare. It has a very aggressive course, and there are no standardized treatment guidelines. We report the case of a 20 year old male patient who presented with history of right neck swelling since 6 years for which he had undergone right parotid surgery 5 years ago. The final histopathological report indicated that the mass was a pleomorphic adenoma. One year after the first surgery, the patient experienced recurrence of swelling over the operated site, and the size of the swelling has been increasing gradually since then. He was evaluated clinically, and a large mass was noted over the upper aspect of the right upper neck, extending to the occipital and parotid regions. An MRI scan was done which showed a 12 × 10 × 8 cm lesion centred in the right parotid gland, involving paraspinal muscles, C1–C2 vertebrae and extending into the parapharyngeal space. FNAC of the lesion showed features of pleomorphic adenoma. The patient underwent a complete excision of the tumour. The patient's post-operative period was uneventful. The final histopathological report of the patient was extraosseous osteosarcoma of the parotid gland. The patient was referred for adjuvant radiotherapy. He has been on regular follow-up for the past 6 months and has shown no sign of recurrence. EOS is an extremely rare tumour of the head and neck region which often requires extensive surgical resection with or without adjuvant radiotherapy. It has a high rate of local recurrence and a very low disease free survival. Such patients should be kept on a close follow-up. [ABSTRACT FROM AUTHOR]

Schwannomas are benign nerve tumours arising from the Schwann cells. Approximately 25-45% of schwannomas occurs in the head and neck region. Majority of schwannomas in the head and neck region arise from the vagus nerve. Trigeminal schwannomas account for about 0.2% of all intracranial tumours. Trigeminal schwannomas can originate from any section of the fifth cranial nerve, from the root to the distal extracranial branches, but majority develops from the Gasserian ganglion, usually growing in the middle cranium. Most common presenting symptom is facial pain. MRI is the imaging modality of choice and CT scan usually serves as a supplementary imaging especially for skull base tumours. 47 year old male patient presented to the outpatient department with complains of swelling over the left side of palate. Contrast enhanced CT scan demonstrated a large bilobed heterogeneously enhancing soft tissue lesion in the left infratemporal fossa with widened foramen ovale and extension of lesion into the Meckel's cave, larger contiguous component extending into ramus of mandible. MRI scan showed a large lobulated mass in the left masticator space with intracranial extension. Biopsy of the lesion was suggestive of schwannoma. The patient underwent left composite resection with dural repair and free flap reconstruction. Post operatively, on day 5 he developed features of meningitis for which he was treated conservatively and later discharged in stable condition. Trigeminal schwannomas are rare tumours with very low chance of malignant transformation which commonly presents with facial pain. MRI is the imaging modality of choice. Complete surgical excision is the treatment of choice. [ABSTRACT FROM AUTHOR]

In this work, a junctionless(JL) gate all around (GAA) silicon nanowire field-effect transistor sensor for the detection of hydrogen (H2) has been carried out. The sensors are designed to specify hydrogen gas (H2) existence. Unsafe conditions can result if hydrogen escapes and accumulates in an enclosed space throughout the purifying process; this is why we try to investigate technologically ultra-small-scale hydrogen gas sensor devices. The sensor also showed satisfactory characteristics for ensuring safety when handling hydrogen and remarkable selectivity for monitoring H2, among other gases, such as LPG, NH3, and CO. The temperature and palladium (Pd) gate work function variations in the translation processes are well-thought-out throughout a change in palladium (Pd) gate work function following exposure to the hydrogen gas molecule (H2). Due to its sensitivity to H2 gas, palladium (Pd) is employed as a gate electrode in H2 gas detection. Shift in threshold voltage (Vth), Ion and Ioff as a result of the metal work function at the gate changing when gas is present; these changes can be regarded as sensitivity parameters for sensing hydrogen gas molecules. ATLAS-3D device simulator has been conducted at low drain bias voltage (0.05V). This study focuses on temperature variation (300K to 500K) and palladium (Pd) metal gate work function variations (5.20eV to 5.40eV) to examine the existence of hydrogen molecule(H2) and its effect on the performance of junctionless SiNW-GAA field-effect transistor gas sensors. When the sensitivity S I OFF , of proposed JL-GAA-SiNWFETis compared with GAA-MOSFET and bulk MOSFET, JL-GAA-SiNWFET shows improved sensitivity. The results show that as 150mV Pd work function shifts at the gate, the sensitivity improvement with JL-GAA-SiNWFET-based hydrogen gas sensors are 51.65% and 124.51% compared with GAA-MOSFET and MOSFET, respectively. High dielectric oxide (HfO2) and interface oxide (SiO2) is also employed at the gate to overcome electron tunneling. The study of this work proves that a silicon nanowire field-effect transistor with a junctionless gate all around catalytic palladium (Pd) metal gate is the best candidate for sensing hydrogen gas molecules than a bulk metal oxide semiconductor field-effect transistor (MOSFET). [ABSTRACT FROM AUTHOR]

This paper presents a charge plasma junctionless tunnel field effect transistor (JLTFET) based on a novel blend of an arsenide/antimonide tunable bandgap source to channel (S/C) tunneling interface by incorporating binary/ternary compound semiconducting materials (InAs/AlGaSb) in the source and channel regions to investigate the radio frequency (RF), linearity and intermodulation distortion performance. The proposed hetero-material JLTFET (H-JLTFET) is compared with a conventional homo-material (silicon) based JLTFET to explore the possible scope of HJLTFET for RFIC and wireless applications. The simulation study reveals that the HJLTFET achieves an improved performance in consideration of RF, Linearity and intermodulation distortion FOMs as parasitic capacitance (Cgg, 60.7% ↓), maximum oscillation frequency (fmax, 2292% ↑), gain bandwidth product (225 times ↑), Intrinsic gain (Av, 708% ↑), peak transconductance (gm, 79 times ↑), and various signal performance metrics such as VIP2 (97.9% ↑), VIP3 (326% ↑), IIP3 (237.9% ↑), and 1-dB compression point (11.6% ↑) in comparison to JLTFET. Moreover, HJLTFET shows better reliability in terms of power gains and small signal admittance (Y) parameters variation with high frequency as compared to JLTFET. Therefore, HJLTFET appears to be an efficient alternative for high frequency and low power operations required in future RFIC designs and wireless communication systems. [ABSTRACT FROM AUTHOR]

In this article, we investigated the analog performance and RF(Radio Frequency) performance of ferroelectric layer improved Field Effect Transistor device that is metal ferroelectric metal insulator metal oxide transistor (MFMIMOS) with spacer and without spacer. A proposed device MFMIMOS (spacer) with spacer enhances the ON-current (Ion) by 25% as compared to a without spacer device MFMIMOS, leakage current (Ioff) reduces by almost 37%, switching ratio (Ion/Ioff) enhanced by 99%, threshold voltage (Vth) increased by 0.29%, subthreshold swing (SS) reduced by almost 5.6% and drain induced barrier lowering (DIBL) lowed by 17.6% over MFMIMOS. We also examined the analog parameters for improving the performance of the proposed device MFMIMOS with a spacer at temperature (T) 300K such as a transconductance generation factor (TGF), transconductance (gm), intrinsic gain (Av), early voltage (Vea), intrinsic delay (Ti), and some RF parameters gain transconductance frequency product (GTFP), cut off frequency (Ft), and gain frequency product(GFP). In the variation of temperature on MFMIMOS(spacer) we observed improved assessment at room temperature rather than other temperatures T = 400K and T = 500K such as threshold voltage higher by 2.4 times over temperature T = 500K, switching ratio (Ion/Ioff), transconductance (gm), transconductance generation factor (TGF). All the simulated result is taken by Visual TCAD simulator with high compatibility of MFMIMOS (spacer) with spacer. Thus, the proposed device MFMIMOS (spacer) with spacer shows significantly improved analog performance than its conventional counterpart and improved performance at room temperature (T = 300K) rather than other temperatures T = 400K and T = 500K. [ABSTRACT FROM AUTHOR]

The present investigation aims to analyze higher-order endothermic/exothermic chemical reactions with activation energy by considering thermophoresis and Brownian motion effects on MHD mixed convective flow across a vertical stretching surface. The influence of velocity slip, thermal slip, and concentration slip along with an inclined external magnetic field is also considered. The governing coupled non-linear partial differential equations are transformed into ordinary differential equations using similarity transformation. The resulting system of non-linear ODEs is solved by the Newton Raphson shooting technique using the RK-4 algorithm. The impact of various physical parameters discovered in the problem viz. endothermic/exothermic reaction variable, thermophoresis parameter, activation energy parameter, Brownian motion parameter, chemical reaction parameter have been analyzed on velocity profile, temperature profile, and concentration profile. The effects of these parameters on skin-friction coefficient, Nusselt number, and Sherwood number are displayed in tabular form as well as surface plots. The impact of various physical parameters that appeared in the entropy generation is shown using surface and contour plots. The numerical findings are in good agreement with the previously published results. It is observed that an increment in thermophoresis and Brownian motion parameters results in a declination of entropy profiles, whereas an increment in Bejan number profiles is observed. A small region near the surface exhibits an inclination in concentration profiles with an increase in the order of the chemical reaction. In contrast, the opposite effect is analyzed near the boundary layer. Also, the contour and surface plots are displayed to portray real-world applications in industrial and technical processes and the physical depiction of flow characteristics that arise in the current study. [ABSTRACT FROM AUTHOR]

In this work, we examined the double metal below ferroelectric layer FET that is double metal below negative capacitance field-effect transistor (DM-below-NCFET) for biosensing application and change in nanocavity gap with biomolecules as protein, ChO x (cholesterol oxidase), streptavidin, and uricase. For measuring the electrical characteristic and neutral biosensing such as threshold voltage, switching ratio ( I on / I off ) of the device which is higher than one without molecules by 1.52 times, sensitivity of protein enhanced by 1.11 over without biomolecule, limit of detection of protein is higher by 1.012 times over without molecule, shift in potential have been researched for cavity length 10 nm. The biosensor indicated improved sensitivity for biomolecules with the rise in their dielectric parameter. Moreover, modulation of the length of the gap of cavity was too examined, exposing that its increment (from 8 to 12 nm) altogether upgraded the sensitivity of the proposed biosensor. Visual TCAD (Technology Computer-Aided Design) software is used for simulating all results. In general, the consequences of this examination represent that such DM-below-NCFET biosensors can display extreme sensitivity (1.11) at small drain voltage (0.4 V), empowering their utilization for biosensor applications to analyze different infections which involve low power, extreme density, and enhanced speed. [ABSTRACT FROM AUTHOR]

The present investigation is focused on the analog/RF performance of ferroelectric (FE) based substrate metal oxide semiconductor field effect transistor (MOSFET) for digital application as an inverter. Short channel effect (SCEs) reduced significantly with improvement in switching ratio (Ion/Ioff). The simulation shows the immunity towards the parameters like transconductance (gm), transconductance generation factor (TGF), early voltage (VEA) and the intrinsic gain (AV) which allows the device to look into digital application. Also, the RF performance parameters come out to be superior for the proposed device structure, as the gain frequency product (GFP) and gain bandwidth product (GBP) enhanced by 100 and 10 folds, respectively. Further, RF investigation shows the enhanced results as attributed with peak values for transconductance frequency product (TFP) and gain transconductance frequency product (GTFP). The transient analysis shows an improvement in the noise margin (NM) for FE-MOSFET structure. Thus, the proposed architecture can be an attractive alternative for the digital application. [ABSTRACT FROM AUTHOR]

In this paper, a novel biomolecule nanocavity immobilization in a dielectric modulated triple-hybrid metal gate-all-around (THM-GAA) junctionless (JL) NWFET has been proposed to improve sensitivity for detecting various diseases. A comparative analysis of the dielectric modulated triple-hybrid metal gate-all-around JL-NWFET biosensor has been carried out with unique and double-hybrid metal gate (DHM) transistors immobilizing different biomolecules (neutral) such as streptavidin, ChO X , APTES, uricase, and biotin in the nanogap cavity region. The simulation results were analyzed using the Atlas-3D device simulation tool. The work shows that higher work-function and higher dielectric materials near the drain suppress/overcome short-channel effects and quantum mechanical tunneling caused by hot-carrier and electron scattering due to a high electric field and saturation velocity. The impact of neutral biomolecules on device output characteristics such as switching ( I ON / I OFF ) ratio, shifting threshold voltage ( Δ V th ), intrinsic voltage gain g m / g d , drain off-current sensitivity S I OFF , subthreshold slope, transconductance g m , output conductance g d , surface potential and output resistance 1 / g d has been studied. Sensitivity of the proposed device for detecting a specific neutral biomolecule was examined using a drain off-current ratio, and the results were compared with available works. The result shows a higher sensitivity in a triple-hybrid metal gate transistor than a unique and double-hybrid metal gate transistor in addition to available works, as we have discussed under the results and discussion section. For example, drain off-current sensitivity ( S I OFF ) in a triple-hybrid metal gate when a biotin biomolecule is immobilized uniformly in the nanogap cavity was 217.6% and 46.43% higher than a unique and double-hybrid metal gate transistor, respectively. We found that the proposed device can detect a specific biomolecule to diagnose different biomarkers for diseases such as breast and lung cancer. [ABSTRACT FROM AUTHOR]

In this manuscript, a numerical model based on the electric field, threshold voltage, sub-threshold current, and electrostatic potential in cylindrical coordinates using Poisson’s equation for triple hybrid metal (THM) gate dielectric modulated junctionless silicon-nanowire gate all around FET based uricase and ChOX biosensor was developed at 40 nm technology (20 nm gate length) to study different gate engineering optimization effects on the performance of the proposed device. The results of the ATLAS-3D TCAD" device simulator agreed with a derived analytical model. Three types of gate optimization (gate engineering) are denoted by Mϕ (4.86, 4.96 and 4.50 eV), Oϕ (4.96, 4.86 and 4.50 eV), and Qϕ (4.86, 4.50 and 4.96 eV) each have three different metal work-function, including uricase and cholesterol oxidase (ChOX) biomolecules have been coated in the nanocavity to determine their impact on the device performance and also, the effect of nanogap cavity length on the proposed device was examined taking numerous simulations. Our findings conclude that nanocavity coated with ChOX dielectric and having tunable work-function optimized at “O” signifies better output results in the device sensitivity, shifting threshold voltage, switching ratio, transconductance, intrinsic voltage gain, and device efficiency. For instance, the switching ratio in the case of ChOX biomolecule for M, O, and Q gate optimizations are 5.22 × 105, 1.36 × 106, and 2.18 × 104, respectively. We conclude that the proposed devices with optimizing gate work function at “O” suggest new opportunities for future ultra-large-scale integration (ULSI) development to achieve highly efficient device performance. [ABSTRACT FROM AUTHOR]

Key message: Comparative analysis of herbivory responsive miRNAs between pod borer susceptible C. cajan and its resistant Crop Wild Relative (CWR) C. scarabaeoides revealed miRNA-based regulation of defense genes and plant–insect interactions. Gram pod borer (Helicoverpa armigera) is one of most devastating pests of pigeon pea (Cajanus cajan) worldwide, responsible for huge losses in crop productivity. The lack of genes conferring resistance to pod borer in pigeon pea has proven to be a bottleneck for its improvement. One of its CWR, C. scarabaeoides has demonstrated resistance to this pest and can be exploited for developing pest resistant crop varieties. Differences in expression patterns of herbivory responsive microRNAs in the susceptible C. cajan and resistant C. scarabaeoides after different time duration of pod borer infestation (2 h, 8 h and 18 h) were identified, characterized and functionally validated to understand their role in insect defense response. A total of 462 conserved and 449 novel miRNAs and 273 conserved and 185 novel miRNAs, were identified in C. cajan and C. scarabaeoides, respectively. Among the identified miRNAs, 65, 68 and 65 miRNAs were found to be differentially expressing between the C. scarabaeoides and C. cajan libraries 2 h, 8 h and 18 h post infestation, respectively. These miRNAs were found to target genes involved in a number of pathways contributing to defense and acquired resistance in C. scarabaeoides against pod borer, indicating miRNA-based regulation of defense pathways. Expression patterns of eight of these miRNAs were validated by qRT-PCR. This study provides novel insights into the miRNA-mediated plant–insect interactions and the mechanisms of regulatory pathways involved in insect defense. These findings can be utilized for further exploring the mechanism of herbivore defense in plant systems. [ABSTRACT FROM AUTHOR]

IEEE 802.11p is an established standard for Wireless Access in Vehicular Environment (WAVE) to support Intelligent Transportation System (ITS), which is one of the most imperative Vehicular Ad hoc Network (VANET) applications. VANET Vehicle-to-Everything (V2X) communications require On-Board Unit (OBU) and On-Board Diagnostic (OBD) systems to be installed in vehicles. Such systems enhance driver safety by generating in-vehicle alerts but require advanced transportation infrastructure and are high-priced. Cost-effective smartphone-based V2X communication systems have been developed for improving driver and pedestrian safety by generating collision forewarning, traffic congestion alert, road anomalies alert, etc., to prevent road crashes. In this paper, we propose to further reduce the number of accidents by augmenting driver's awareness about driving behaviors of neighboring drivers and forthcoming unfavorable road conditions. The system creates a vehicular network based on smartphones using Wi-Fi and detects driver behavior and road condition. Novelty of the proposed system lies in disseminating road status and driver behavior (detected considering complete context) to alert the driver in advance using smartphone Wi-Fi instead of special ITS communication infrastructure. Furthermore, an algorithm to ignore invalid beacons that do not contribute to situational awareness has been proposed. Implementation and testing of the system has been done in real time using two vehicles. For large-scale implementation, SUMO and NS-3 simulations have been used. The results indicate the efficacy of the proposed system with successful message dissemination up to 130 m. The proposed system aims at providing the flavor of ITS to developing countries in a cost-effective manner using a mobile smartphone. [ABSTRACT FROM AUTHOR]

Endophytic fungi are prolific generators of bioactive metabolites with natural antioxidant properties that have a range of potential uses. In the present work, the antioxidant activity and phylogenetic diversity of endophytic fungi obtained from semi-arid terrestrial plants and the fungi obtained from the mangrove soil samples are investigated. The fungal isolates were identified by employing molecular characterisation and phylogenetic analysis by internal transcribed spacer (ITS) sequences. Fungi belonging to six taxonomic orders of Ascomycota associated with nine genera were identified, these being Diaporthales, Eurotiales, Hypocreales, Onygenales, Pleosporales and Xylariales. The antioxidant activity of the methanolic extracts of the fungal isolates was determined using modified 2,2’-diphenyl-1-picrylhydrazyl (DPPH) and 2,2’-azino-bis (3-ethylbenzothiazoline-6-sulphonicacid) (ABTS) methods. Amongst the fungal isolates, Aspergillus sp. AREF023 and Neocosmospora sp. AREF014, obtained from different parts of Datura metel, displayed the highest level of radical inhibition (80.76% and 70.62% respectively). GC/MS analysis of the active isolates confirmed the presence of known antioxidant phenolic compounds, including 2-tert-Butyl-5-hydroxymethyl-5-methyl-[1,3]dioxolan-4-one and 2,5-ditert-butylphenol, in the their crude extracts. Our findings suggest that fungal isolates from D. metel can be a sustainable resource for natural antioxidants. [ABSTRACT FROM AUTHOR]

In this paper, a novel recessed T-gate double channel HEMT with InGaN back barrier has been designed and studied. The double channel is formed by the AlN layer's insertion below the InAlN/GaN interface, enhancing the drain current density (2.5A/mm). However, double channel HEMT suffers from a lack of gate controllability, due to which device performance decreases. This problem has been resolved by using the InGaN as a back barrier which enhances the carrier confinement of 2DEG by raising the conduction band for the GaN buffer and significantly enhances the gate controllability over a lower channel. Precisely a brief comparison has been done of the proposed device with conventional double channel HEMT. Performance parameters like drain current (Ids), transconductance (gm), intrinsic gain (Av), output conductance (gd), early voltage (VEA), TGF, parasitic capacitances (Cgs, Cgd), cut-off frequency (fT), maximum oscillation frequency (fmax), gain frequency product (GFP), transconductance frequency product (TFP), and gain transconductance frequency product (GTFP) have been investigated. Further, the improvement in linearity parameters such as VIP2, VIP3, IIP3, and 1-dB compression point has been observed by varying the back barrier distance from the lower channel. [ABSTRACT FROM AUTHOR]

This paper explores the efficacy of Gallium Arsenide (GaAs) as a fin material on the analog metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET. Besides, capacitance-related parameters such as gain–bandwidth product (GBP) and transconductance frequency product (TFP) are also evaluated to analyze the device switching and DC performance. The simulated results validate that compared to Si, GaAs as a fin material increases the switching (Ion/Ioff) ratio by ∼ 103 times and reduces the leakage current, DIBL, and SS by ∼ 99%, ∼ 50%, and ∼ 26%, respectively. Moreover, for GaAs, the peak value of GBP and TFP increases by 9.93 and 11.40 times compared to Si due to the considerable decrease in the parasitic capacitances. Thus, replacing Si with GaAs as a fin material significantly improves the short-channel effects (SCEs) of the device (Ioff, DIBL, and SS) and capacitances-related parameters (Cgs, Cgd, Cgg, GBP, and TFP). Besides, the impact of gate length (Lg), fin height (HFin), and fin width (WFin) of GaAs GS-GAA FinFET on analog metrics and parasitic capacitances are assessed for low power ULSI switching applications. The simulated results reveal that the SCEs and parasitic capacitances improve considerably with decreased Lg, HFin, and WFin. [ABSTRACT FROM AUTHOR]

This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded static, analog, and distortion performance. The crucial static and analog parameters, for instance, electric field, potential, band diagram, electron concentration, transconductance, quality factor, drain current, early voltage, intrinsic gain, output resistance, and output conductance, are evaluated and analyzed. The simulated results reveal that the static and analog performance of JAM-GS-GAA FinFET enhances with the increase in the fin AR. Besides, linearity and distortion parameters like voltage intercept points (VIP2, VIP3), 1-dB compression point, zero crossover point, harmonic distortions (HD2, HD3), and total harmonic distortion are explored. It has been noticed that a low fin AR lessens the distortion in the device and improves the device's linearity performance. Moreover, the zero crossover point decreased significantly for the device with low fin AR, which reduces the device operation optimum bias point. Thus, the findings of this paper can help engineers to design 3-D devices according to their needs. [ABSTRACT FROM AUTHOR]

Although Tunnel Field Effect Transistors (TFET) offer low leakage current and allow good scalability, but they suffer from low ON-current. Present research paper focuses on the designing of an industry ready TFET that can operate efficiently at nano-scales allowing the fabrication of a smaller and more energy efficient overall device. To achieve the same, the Gate Metal Engineering (GME) and n+ Source Pocket (SP) schemes have been integrated on Double-Gate TFET (DG-TFET). For a distinct examination of the merits of GME and SP, 4 types of TFET architectures, namely the DG-TFET, GME-DG-TFET, SP-DG-TFET and GME-SP-DG-TFET (which amalgamates the merits of both GME and SP engineering) are investigated. All these device architectures are examined in terms of their electrical characteristics and analog parameters. GME-SP-DG-TFET (being superior among the four) is further analyzed under the presence of interface fixed charges (FC) of different polarity to affirm its reliability. Investigations of this device structure reveal that the positive FC are more noxious for the device as compared to negative FC. However, the enhanced flatband voltage under the negative FC translates to the high gate bias requirement to turn the device ON. Observance of only marginal variations in the parasitic capacitances and efficiency of the GME-SP-DG-TFET device in the presence of FC (both positive/negative) signifies its immunity and promises enhanced reliability. A remarkable improvement of the ION/IOFF by two order of magnitude (from 1010 to 1012) and a decrease in Vth by 27.71% observed for GME-SP-DG-TFET as compared to DG-TFET along with the improved reliability makes the former an efficient candidate for low power analog/RF applications. [ABSTRACT FROM AUTHOR]

In this article, we investigated the impact of temperature variation on DC, analog, RF, and wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas 3D simulator. The GAA structure introduction enhances the switching ratio (Ion/Ioff) by ∼152.37% and reduces the subthreshold swing (SS) by ∼6.5%. At gate voltage (Vgs) ∼ 0.725 V, the GS-GAA FinFET device exhibits the ZTC (Zero-Temperature-Coefficient) bias point, i.e., the effect of temperature on drain current gets nullified. DC parameters such as leakage current (Ioff), on current (Ion), SS, and threshold voltage (Vth) deteriorate with the rise in temperature. The enhancement in temperature degrades the RF and analog performance of the device by suppressing the parameters like transconductance (gm), device efficiency (TGF), cut-off frequency (fT), gain frequency product (GFP), gain-bandwidth product (GBP), etc. The device's wireless performance is analyzed using linearity and harmonic distortion parameters such as gm3, gm2, 1-dB compression point, IIP3, VIP3, VIP2, IMD3, HD3, and HD2, and it shows significant improvement as the temperature increases from 300 K to 500 K. [ABSTRACT FROM AUTHOR]

Gentiana is an important genus of around 360 medicinally important species, majority of which are not well characterized. Despite its importance, very few genomic resources are available for Gentiana L. Till date, the number of informative and robust simple sequence repeat (SSR)-based markers is limited and very few efforts have been made for their development. A set of robust, freely accessible and informative SSR markers for Gentiana is a pre-requisite for any molecular systematic as well as improvement studies in this group of pharmacologically valuable plants. In view of the importance of these plants, Expressed Sequence Tag (EST) sequences of 18 Gentiana species were surveyed for the development of a large set of non-redundant SSR markers. A total of 5808 perfect SSR with an average length of 17 bp and relative abundance of 214 loci/Mb were identified in the analysed 47,487 EST sequences using Krait software. Mapping of the ESTs resulted in gene ontology annotations of 49.14% of the sequences. Based on these perfect SSRs, 2902 primer pairs were designed, and 60 markers were randomly selected and validated on a set of Gentiana kurroo Royle accessions. Among the screened markers, 39 (65%) were found to be cross-species transferable. This is the first report of the largest set of functional, novel genic SSR markers in Gentiana, which will be a valuable resource for future characterization, genotype identification, conservation and genomic studies in the various species of this group of important medicinal plants. [ABSTRACT FROM AUTHOR]

Concerned work is solely dedicated to the optimized characteristics of Nanoscale vacuum channel TF (Truncated fin)-FinFET at gate length of 7 nm. NVCTF-FinFET has its own benefit, due to high immune to noise and temperature as compared to TF-FinFET. The working of device stood perfectly well in case of NVCTF-FinFET. When tested, we end up with 3 times less current variation w.r.t temperature, 3 times more efficiency, 104 times more amplifying power analysed at corresponding peak values. These results evident the performance enhancement of NVCTF-FinFET, if seen from analog point of view. When studied from the perspective of linearity for RFIC designs, we end up with enhancement in some figure of merits such as 3.5 times in 1-dB compression point, 4 times more IP3, 102 times in HD3 and around 105 times in IMD3 at corresponding peak values. As NVCTF-FinFET provided descent switching ratio and Vth at input voltage (<2 V), which could lead these transistors beyond Moore's law. These simulation difference ultimately made NVCTF-FinFET, a significant candidate to high speed and noise reduction System on chip (SOCs) operations in outer space. [ABSTRACT FROM AUTHOR]

In this work, we examined the analog and circuitry amplifying capacity of our novel 3 nm Truncated Fin Junctionless bulk FinFET (n-type) with two different oxide thicknesses at this small scale of gate length. Both oxide widths of high K-material HfO2 have their own individual benefits, due to high gate controllability as compared to conventional FinFETs having SiO2 as a gate oxide. The device works best with Tox = 1 nm in terms of power amplification. When tested with this width of gate oxide, we end up with increase of 59.18%, 7.22% and 12.11 times at corresponding peak values of Unilateral power gain (Gu), IP3 and fmax. This actually evident the enhanced performance of TF-FinFET for A.C applications at this high range of frequency of the input signal. When device tested at Tox = 1 nm, we end up with the increase of 45%, 21.45%, 16% and decrease of 65% at the corresponding peak values of Intrinsic delay (ti), Transconductance (gm), Drain current (ID) and OFF-state current (IOFF). These results of simulation also showed the compatibility of TF-FinFET in terms of high-performance analog application. After these analyses, we can expect a strong potential for wide variety of applications to high-speed System on chip from this device. [ABSTRACT FROM AUTHOR]

Intuitionistic fuzzy soft set (IFSS) accommodates more uncertainties within the information by considering the parameterization feature than the intuitionistic fuzzy sets and hence its applications are more extensive. Archimedean T-conorm and T-norm (ATT), consists of T-norm and T-conorm classes, is as an essential source to make the comprehensive operational laws. Meanwhile, the Maclaurin symmetric mean (MSM) has a prominent characteristic and the advantage that it can take into account the interrelation between multi-input arguments, including different attributes or different experts. Motivated by these chief characteristics, in this article, we extend the MSM operators to the IFSS based on ATT. In this paper, a method is exploited to solve the multi-criteria decision-making (MCDM) problems under the IFSS environment. To it, firstly, some generalized intuitionistic fuzzy soft operational laws are introduced based on ATT. Secondly, we reveal some averaging and geometric aggregation operators based on MSM operator. Further, some desirable features and particular cases of it are tested and build up with a new technique for illustrating MCDM problems. Finally, an illustration is given to exhibit the methodology and approach's supremacy is shown through a comparative study with prevailing techniques. [ABSTRACT FROM AUTHOR]

In this work, the high-temperature reliability of the Black Phosphorus Trench (BP-T) MOSFET device has been analyzed. When the temperature is very high (500 K), the proposed device (BP-T-MOSFET) shows very high reliability with less effects in the device performance. The device is also calibrated with the experimental data. All the simulation has been performed using ATLAS-3D device simulator. BP-T-MOSFET shows high-temperature reliability in terms of reduced sub-threshold current, hot-electron injection gate current, and impact ionization substrate current. Further, higher switching ratio (Ion/Ioff), electron mobility, and electron velocity have also been observed owing to the electrical properties of black phosphorus used in the trench gate which shows the potential in a high-temperature environment. Owing to trench structure and electrical properties of black phosphorus, BP-T-MOSFET has significant device efficiency and low leakage currents at high temperatures which prove as highly shrieked MOS device applications in harsh temperature environment. [ABSTRACT FROM AUTHOR]

Sentiment analysis refers to the interpretation and computational study of emotions, opinions and appraisals within the text data using text analysis methods. A basic aim of sentiment analysis is to categorize the sentiment polarity of the sentences, document or aspects. Product manufacturers use the knowledge from sentiment analysis for improving their services & products. Hence, there is an atrocious need of an efficient technique that can accurately identify the sentiment polarity of the content. The supervised classification algorithm has been proved favourable for most of the sentiment analysis task and is widely used in opinion mining. This study presents a novel method for sentiment analysis by combining two supervised classification algorithms viz. Decision Tree (DT) and Feed Forward Neural Network (FNN). Pre-processing of data is carried out by using Independent Component Analysis (ICA) and Windowed Multivariate Autoregressive Model (WMAR) is introduced for extraction of potential features. Then highest scores are extracted using Improved Bat Algorithm (IBA) technique and finally, the experimental results are compared with existing algorithms i.e. ID3, J48 and Random forest classifier. The proposed method significantly outperforms the existing sentiment classification methods with accuracy of 97.84%. [ABSTRACT FROM AUTHOR]

This work presents the analog and RF performance evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have been compared with conventional FinFET and GAA FinFET. It has been observed that in comparison to conventional FinFET, leakage current (Ioff) reduces by almost thirty times for the GS-GAA FinFET configuration. Thus, revamping the threshold voltage (Vth), switching ratio (Ion/Ioff), and subthreshold slope (SS) of the proposed device. Also, major analog parameters like transconductance (gm), transconductance generation factor (TGF) enhances considerably with early voltage (VEA) and intrinsic gain (Av) increased by over two times in magnitude for the GS-GAA FinFET configuration. Furthermore, several important RF parameters have been explored, and the outcome of the study is that the GS-GAA FinFET configuration shows superior RF performance. In GS-GAA FinFET configuration, the gain frequency product (GFP) and gain transconductance frequency product (GTFP) amplified by over two times in magnitude with minimal decrease in the cut-off frequency (fT) and maximum oscillation frequency (fmax). Thus, the proposed GS-GAA FinFET device can be looked upon as an appealing option for high-frequency analog/RF applications. [ABSTRACT FROM AUTHOR]

This paper investigates the reliability of a dual metal gate-hetero-material junctionless tunnel FET (DMG-HJLTFET), by using a novel combination of III–V compound semiconducting materials, InAs (lower bandgap) in the source region and GaAs (higher bandgap) in the channel and drain regions. We applied bandgap engineering and dual material gate engineering to improve the linearity metrics and distortion parameters by optimizing an appropriate lower work function tunnel gate toward the source and higher work function supplementary gate toward the drain and compared all the results with SMG (single metal gate)-HJLTFET and Si-JLTFET. The DMG-HJLTFET showed marked improvements in terms of ION, ION/IOFF, SS, g m , g m 3 , VIP2, VIP3, and 1-dB compression point. The input power, IIP3 of DMG-HJLTFET, is 158% greater than SMG-HJLTFET and is 154.7% greater than Si-JLTFET. The distortion power, IMD3 of DMG-HJLTFET, is 171.8% and 20.5% lower than SMG-HJLTFET and Si-JLTFET, respectively, thereby making it suitable for low-power distortion-free wireless communication systems. [ABSTRACT FROM AUTHOR]

In the present work, the n + source pocket PIN gate all around tunnel FET (PNIN-GAA-TFET) based gas sensor has been proposed. Various analyte gases such as hexane, methanol, isopropanol, dichloromethane, and chloroform have been examined for their sensitivity and stability. The sensing of various analyte gases relies on the fact of work function modulation of the conducting polymer (used as gate) on the exposure of the gas vapors. Subsequently, the work function modulation of the conducting polymer gate alters the characteristics of the device that is calibrated for examining the sensitivity of the proposed gas sensor. The shift in the subthreshold current after the exposure of the analyte gas has been used as a sensing metric. Moreover, the influence of ambient temperature, conduction path, i.e., the channel radius and the oxide thickness of gate on the sensitivity and the characteristics of the proposed gas sensors have also been examined. The employment of the proposed PNIN-GAA-TFET based gas sensor may fulfill the perpetual demands of chemical and pharmaceutical industries, biomedical diagnostics, environmental monitoring and automotive industries by offering a low power, highly sensitive and reliable analyte gas detection. [ABSTRACT FROM AUTHOR]