1. Improved electrical properties and microstructure of Zn-doped K0.37Na0.63NbO3-based bulk crystals grown by seed-free solid-state method.
- Author
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Zhao, Yanguang, Jiang, Minhong, Li, Lin, Wang, Tao, Ren, Penghan, and Rao, Guanghui
- Abstract
A trace of Zn doped 0.997K
0.37 Na0.63 NbO3 -0.003BaBiO3 based lead-free piezoelectric single crystals were prepared by a seed-free, solid-state method. The effects of Zn doping on the growth, microstructure and electrical properties of the single crystals were systematically studied. The results show that the Zn doping does not change the perovskite crystalline structure of the crystals. Compared with many other dopants, Zn doping can effectively reduce or even avoid crystal cracking, and bending/warping deformation during the growth process. With the increase of Zn content, the volume of the grown crystal first increases and then decreases, while the roughness of the crystal exposed surface first decreases and then increases. When the Zn-doping content is 0.8at.%, the size of the crystal reaches the maximum value of 12 × 10 × 2 mm3 . The influence of Zn-doping content on the main electrical properties of the crystals also shows a similar changing relationship. For the crystal doped with 0.8at.% Zn, excellent electrical properties can be obtained as below: d33 = 354 pC/N, Pr = 47.2 µC/cm2 , Tanδ = 0.6%, kt = 0.68, εr = 515, Tc = 402 °C. The results imply that the crystal has promising development and application prospects. [ABSTRACT FROM AUTHOR]- Published
- 2023
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