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The pure and Zr doped BiTiO thin films have been prepared via the solution-gelation technique. The phase structure, optical band gap, and photovoltaic spectral response were investigated in detail. It shows that the photovoltaic responses of the short-circuit current for Zr doped BiTiO thin films have shown a noteworthy red-shift behavior compared with the pure BiTiO thin films. The halfway points of the full width at half-maximum are detected at 469 and 514 nm, closely corresponding to the measured band gap for the thin films. Thus photovoltaic response behavior is attributed to octahedral distortion and optical band gap narrowing. The present work provides an available way on controlling photovoltaic properties of BiTiO based thin films and accelerating its application in light sensors, light drivers and ferroelectric photovoltaic cells. [ABSTRACT FROM AUTHOR]

Ho, Mn, and Ho, Mn co-doped BiFeO thin films were deposited on Pt (100)/Ti/SiO/Si substrates using solution gelation. The ferroelectric fatigue properties were clearly improved after doping with Ho and Mn. The doped BiFeO thin film displayed more strongly increased ferroelectric, leakage current, and fatigue properties compared with the pure BiFeO thin film. Thus, the improved performance of the BiFeO thin films depends on the structural transformation and reduced oxygen vacancy concentration. The present work provides a feasible approach to enhance the ferroelectric and fatigue properties of BiFeO-based thin films. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR]

Single-phase multiferroic BiFeO and rare-earth metal of dysprosium (Dy) doped BiFeO thin films were prepared by chemistry solution deposition. The structure and electrical properties of the BiFeO thin films were characterized and investigated. It shows that improved ferroelectric polarization, fatigue endurance and leakage current were obtained. Thus enhanced performance are attributed to the lattice distortion happened along with the structure transformation from the rhombohedral structures toward the coexistence of tetragonal and orthorhombic symmetry structures and the decreased oxygen vacancies after doping Dy. The present work provided an available way on enhancing ferroelectric polarization and fatigue endurance of BiFeO based thin films. [ABSTRACT FROM AUTHOR]