1. A toroidal inductor integrated in a standard CMOS process.
- Author
-
Luca Vandi, Pietro Andreani, Enrico Temporiti, Enrico Sacchi, Ivan Bietti, Cesare Ghezzi, and Rinaldo Castello
- Subjects
COMPLEMENTARY metal oxide semiconductors ,DIGITAL electronics ,THEORY ,QUALITY - Abstract
Abstract??This paper presents a toroidal inductor integrated in a standard 0.13??m CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device. A very simple ? model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9?nH and 1.1?nH up to 20?GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15?GHz. No self-resonance is observed within the measurement range. [ABSTRACT FROM AUTHOR]
- Published
- 2007
- Full Text
- View/download PDF