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Highlights: Vacancy in the transition metal layer of sodium cathode material induces the formation lone-pair electrons in the O 2p orbital. Material delivers more capacity from the oxygen redox validated by density functional calculation. Widened dominance of the OP4 phase without releasing O2 gas. This study explores the impact of introducing vacancy in the transition metal layer of rationally designed Na0.6[Ni0.3Ru0.3Mn0.4]O2 (NRM) cathode material. The incorporation of Ru, Ni, and vacancy enhances the structural stability during extensive cycling, increases the operation voltage, and induces a capacity increase while also activating oxygen redox, respectively, in Na0.7[Ni0.2VNi0.1Ru0.3Mn0.4]O2 (V-NRM) compound. Various analytical techniques including transmission electron microscopy, X-ray absorption near edge spectroscopy, operando X-ray diffraction, and operando differential electrochemical mass spectrometry are employed to assess changes in the average oxidation states and structural distortions. The results demonstrate that V-NRM exhibits higher capacity than NRM and maintains a moderate capacity retention of 81% after 100 cycles. Furthermore, the formation of additional lone-pair electrons in the O 2p orbital enables V-NRM to utilize more capacity from the oxygen redox validated by density functional calculation, leading to a widened dominance of the OP4 phase without releasing O2 gas. These findings offer valuable insights for the design of advanced high-capacity cathode materials with improved performance and sustainability in sodium-ion batteries. [ABSTRACT FROM AUTHOR]

Potassium oxide (K2O) is used as a promotor in industrial ammonia synthesis, although metallic potassium (K) is better in theory. The reason K2O is used is because metallic K, which volatilizes around 400 °C, separates from the catalyst in the harsh ammonia synthesis conditions of the Haber-Bosch process. To maximize the efficiency of ammonia synthesis, using metallic K with low temperature reaction below 400 °C is prerequisite. Here, we synthesize ammonia using metallic K and Fe as a catalyst via mechanochemical process near ambient conditions (45 °C, 1 bar). The final ammonia concentration reaches as high as 94.5 vol%, which was extraordinarily higher than that of the Haber-Bosch process (25.0 vol%, 450 °C, 200 bar) and our previous work (82.5 vol%, 45 °C, 1 bar). Potassium oxide is used as a promotor in industrial ammonia synthesis, although metallic potassium is better in theory. Here, the authors demonstrate metallic potassium, an unstable metal that easily volatilizes at high temperature, can be used as a promotor for ammonia synthesis. [ABSTRACT FROM AUTHOR]

This document is a correction notice for an article titled "Impact of Transition Metal Layer Vacancy on the Structure and Performance of P2 Type Layered Sodium Cathode Material" published in Nano-Micro Letters. The correction states that the author Hun-Gi Jung should be affiliated with institutions 3, 4, and 5 instead of just 4 and 5. Additionally, the author's name "A.-Yeon Kim" has been updated to "A-Yeon Kim" without the period. The correction provides the correct author's name and affiliation. Springer Nature, the publisher, remains neutral regarding jurisdictional claims and institutional affiliations. The authors of the article are Orynbay Zhanadilov, Sourav Baiju, Natalia Voronina, Jun Ho Yu, A-Yeon Kim, Hun-Gi Jung, Kyuwook Ihm, Olivier Guillon, Payam Kaghazchi, and Seung-Taek Myung. [Extracted from the article]

Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics1–3. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal–oxide–semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends4 the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties5. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics. Thin films of amorphous boron nitride are mechanically and electrically robust, prevent diffusion of metal atoms into semiconductors and have ultralow dielectric constants that exceed current recommendations for high-performance electronics. [ABSTRACT FROM AUTHOR]

Many attempts have been made to explain the flat rotation curve of spiral galaxies regardless of distance from the center, in disagreement with the Newtonian prediction that this speed should diminish as the inverse square of distance. One explanation for this discrepancy is that the galaxy is embedded in dark matter, which interacts with baryonic matter only gravitationally. Many studies have focused on finding the distribution of this dark matter that fits well with observed data, but it is by definition undetectable by current technology, and must therefore remain hypothetical. Instead of dark matter, we propose a novel force, named mirinae force, generated by the mass of relatively-moving particles, and demonstrate that this force explains the rotation curve and evolution of a galaxy in which some of the inner mass of the supermassive black hole at the galactic center is assumed to be revolving at a relativistic speed. The calculation yielded important results that support the existence of mirinae force and validate the proposed model: First, the mirinae force explains why most of the matter is in the galactic disk and in circular motion which is similar to that of particles in a cyclotron. Second, the mirinae force explains well both the flat rotation curve and the varied slope of the rotation curve observed in spiral galaxies. Third, at the flat velocity of 220 km/s, the inner mass of the Milky Way calculated by using the proposed model is 6.0×10 M, which is very close to 5.5×10 M ( r<50 kpc, including Leo I) estimated by using the latest kinematic information. [ABSTRACT FROM AUTHOR]

The introduction of ferromagnetic order in topological insulators in general breaks the time-reversal symmetry and a gap is opened in topological surface bands. Various studies have focused on gap-opened magnetic topological insulators, because such modified band structures provide a promising platform for observing exotic quantum physics. However, the role of antiferromagnetic order in topological insulators is still controversial. In this report, we demonstrate that it is possible to restore the topological surface states by effectively reducing the antiferromagnetic ordering in Gd-substituted Bi2Te3. We successfully control the magnetic impurities via thermal treatments in ultra-high vacuum condition and observe apparent restoration of topological surface band dispersions. The microscopic mechanism of atomic rearrangements and the restoration process of topological surface states are unraveled by the combination of scanning tunneling microscopy measurements and density functional theory calculations. This work provides an effective way to control the magnetic impurities which is strongly correlated with topological surface states. [ABSTRACT FROM AUTHOR]

Traversing proton beam-irradiated, mid/high-Z nanoparticles produce site-specific enhancement of X-ray photon-electron emission via the Coulomb nanoradiator (CNR) effect, resulting in a nano- to micro-scale therapeutic effect at the nanoparticle-uptake target site. Here, we demonstrate the uptake of iron oxide nanoparticles (IONs) and nanoradiator-mediated, site-specific thrombolysis without damaging the vascular endothelium in an arterial thrombosis mouse model. The enhancement of low-energy electron (LEE) emission and reactive oxygen species (ROS) production from traversing proton beam-irradiated IONs was examined. Flow recovery was only observed in CNR-treated mice, and greater than 50% removal of the thrombus was achieved. A 2.5-fold greater reduction in the thrombus-enabled flow recovery was observed in the CNR group compared with that observed in the untreated ION-only and proton-only control groups (p < 0.01). Enhancement of the X-ray photon-electron emission was evident from both the pronounced Shirley background in the electron yield and the 1.2- to 2.5-fold enhanced production of ROS by the proton-irradiated IONs, which suggests chemical degradation of the thrombus without potent emboli. [ABSTRACT FROM AUTHOR]