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Mg-doped InZnO (MIZO) films were prepared by sol-gel method, and bottom-gate structured thin film transistors (TFTs) were prepared by using the MIZO films. Oxygen and argon (Ar) plasma treatments were carried out on the film and TFTs. The X-ray photoelectron spectroscopy (XPS) results show that both Ar and oxygen etching can increase the oxygen deficiencies, which effectively increase the content of carrier concentration in MIZO films. After both kinds of plasma treatment, the field effect mobility of the MIZO TFTs is greatly improved and the on/off current ratio increases two orders of magnitude. [ABSTRACT FROM AUTHOR]

Fingerprint segmentation is an important step in fingerprint recognition and is usually aimed to identify non-ridge regions and unrecoverable low quality ridge regions and exclude them as background so as to reduce the time expenditure of image processing and avoid detecting false features. In high and in low quality ridge regions, often are some remaining ridges which are the afterimages of the previously scanned finger and are expected to be excluded from the foreground. However, existing segmentation methods generally do not take the case into consideration, and often, the remaining ridge regions are falsely classified as foreground by segmentation algorithm with spurious features produced erroneously including unrecoverable regions as foreground. This paper proposes two steps for fingerprint segmentation aimed at removing the remaining ridge region from the foreground. The non-ridge regions and unrecoverable low quality ridge regions are removed as background in the first step, and then the foreground produced by the first step is further analyzed for possible remove of the remaining ridge region. The proposed method proved effective in avoiding detecting false ridges and in improving minutiae detection. [ABSTRACT FROM AUTHOR]