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In spintronics, transverse anomalous transport properties have emerged as a highly promising avenue surpassing the conventional longitudinal transport behaviors. Here, we explore the transverse transport properties of monolayer and bilayer Fe3−xCoxGaTe2 (x = 0.083, 0.167, 0.250, and 0.330) systems. All the systems exhibit ferromagnetic ground states with metallic features and also have perpendicular magnetic anisotropy. Besides, the magnetic anisotropy is substantially enhanced with increasing Co-doping concentration. However, unlike magnetic anisotropy, the Curie temperature is suppressed by increasing the Co-doping concentration. For instance, the monolayer and bilayer Fe2.917Co0.083GaTe2 hold a Curie temperature of 253 K and 269 K, which decreases to 163 K and 173 K in monolayer and bilayer Fe2.67Co0.33GaTe2 systems, respectively. We find a giant anomalous Nernst conductivity (ANC) of 6.03 A/(K·m) in the monolayer Fe2.917Co0.083GaTe2 at −30 meV, and this is further enhanced to 11.30 A/(K·m) in the bilayer Fe2.917Co0.083GaTe2 at −20 meV. Moreover, the bilayer Fe2.917Co0.083GaTe2 structure has a large anomalous thermal Hall conductivity (ATHC) of −0.14 W/(K·m) at 100 K. Overall, we find that the Fe3−xCoxGaTe2 (x = 0.083, 0.167, 0.250, and 0.330) structures have better anomalous transverse transport performance than the pristine Fe3GaTe2 system and can be used for potential spintronics and spin caloritronics applications. [ABSTRACT FROM AUTHOR]

Anomalous transverse conductivities, such as anomalous Hall conductivity (AHC), anomalous Nernst conductivity (ANC), and anomalous thermal Hall conductivity (ATHC), play a crucial role in the emerging field of spintronics. Motivated by the recent fabrication of two-dimensional (2D) ferromagnetic thin film Fe3GaTe2, we investigate the thickness-dependent anomalous transverse conductivities of the 2D Fe3GaTe2 system (from one to four layers). The atomically ultrathin 2D Fe3GaTe2 system shows above-room-temperature ferromagnetism with a large perpendicular magnetic anisotropy energy. Furthermore, we obtain a large AHC of −485 S/cm in the four-layer thickness, and this is further enhanced to −550 S/cm with small electron doping. This AHC is seven times larger than the measured AHC in thicker 2D Fe3GaTe2 (178 nm). The ANC also reaches 0.55 A/K.m in the four-layer structure. Along with these, the four-layer system exhibits a large ATHC (−0.105 ~ −0.135 W/K.m). This ATHC is comparable to the large ATHC found in Weyl semimetal Co3Sn2S2. Based on our results, the atomically ultrathin 2D Fe3GaTe2 system shows outstanding anomalous transverse conductivities and can be utilized as a potential platform for future spintronics and spin caloritronic device applications. Ultrathin 2D Fe3GaTe2: A Game-Changer in Future Spintronics Two-dimensional materials have become popular in science due to their unique characteristics and potential for new technologies. In this study, researchers examined a specific 2D material, Fe3GaTe2, which has shown potential due to its strong magnetism at high temperatures, making it suitable for spintronics devices that operate at room temperature or above. The team performed calculations to investigate how the thickness of Fe3GaTe2 layers impacts their magnetic and anomalous transport properties. In conclusion, the study showed that adding more layers to the Fe3GaTe2 single layer improves its anomalous transverse conductivities, which could lead to better performance in future spintronic devices. The findings suggest that ultra-thin layers of this material could be very useful in the field of spintronics, potentially leading to more efficient and powerful technology. This summary was initially drafted using artificial intelligence, then revised and fact-checked by the author. We investigate the anomalous transverse conductivities of a two-dimensional (2D) magnetic Fe3GaTe2 system (monolayer to four-layer thickness). A giant anomalous thermal Hall conductivity (ATHC) of -0.14 W/K.m is obtained in the four-layer structure, and this value is comparable to the typical ATHC found in bulk materials which is rare to find in low-dimensional systems. Our findings suggest that the ultra-thin 2D Fe3GaTe2 system could be a promising platform for future spintronics and spin caloritronics device applications. [ABSTRACT FROM AUTHOR]

Anomalous Hall conductivity (AHC) and valley polarization are attracting tremendous interest in spintronics and valleytronics technologies. Here, we investigate the possibility of the electric field induced switching of the AHC and magnetic proximity effect induced valley polarization in the two-dimensional (2D) WSe2/1T-VSe2 heterostructure. Due to the small total energy difference, two stackings could happen (C-I and C-II). The WSe2 layer has a valley polarization of -19 meV in the C-II stacking, and it is further increased up to -28 meV under electric fields. Also, we obtain an AHC of 75 (80) S/cm in the C-I (II) stacking. We find a sign change from positive AHC to negative value under the electric field in hole doping of the C-II stacking. We attribute this reversal of the AHC to the electric field dependent Berry curvature variation. Our finding suggests that the electric field induced AHC switching can be possible in the 2D heterostructure. The anomalous Hall effect observed in certain magnetic materials presents opportunities for spin-driven electronics, also known as spintronics. The authors discuss first-principles studies of the band structure and anomalous Hall conductivity of a WSe2/VSe2 heterostructure in two possible configurations, which they find to be tunable by electric field. [ABSTRACT FROM AUTHOR]

Nd2Fe14B and Nd2−xDyxFe14B (x = 0.25, 0.50) particles were prepared by the modified co-precipitation followed by reduction–diffusion process. Bright field scanning transmission electron microscope (BF-STEM) image revealed the formation of Nd–Fe–B trigonal prisms in [− 101] viewing zone axis, confirming the formation of Nd2Fe14B/Nd2−xDyxFe14B. Accurate site for the Dy substitution in Nd2Fe14B crystal structure was determined as "f" site by using high-angle annular dark field scanning transmission electron microscope (HAADF-STEM). It was found that all the "g" sites are occupied by the Nd, meanwhile Dy occupied only the "f" site. Anti-ferromagnetic coupling at "f" site decreased the magnetic moment values for Nd1.75Dy0.25Fe14B (23.48 μB) and Nd1.5Dy0.5Fe14B (21.03 μB) as compared to Nd2Fe14B (25.50 μB). Reduction of magnetic moment increased the squareness ratio, coercivity and energy product. Analysis of magnetic anisotropy at constant magnetic field confirmed that "f" site substitution did not change the patterns of the anisotropy. Furthermore, magnetic moment of Nd2Fe14B, Nd2−xDyxFe14B, Nd ("f" site), Nd ("g" site) and Dy ("f" site) was recorded for all angles between 0° and 180°. [ABSTRACT FROM AUTHOR]

Valleytronics is receiving extensive research efforts. Thus, we investigated the electric field-induced valley polarization in the WSe2/CrSnSe3 heterostructures by varying the stacking order. The heterostructure shows indirect band gaps of 270 and 330 meV in the two most stable structures. The WSe2/CrSnSe3 heterostructure displays a ferromagnetic ground state with out-of-plane anisotropy (0.02 meV) in one stable stacking (S-1) while a small in-plane anisotropy (−0.01 meV) is found in other stacking (S-2). The Curie temperature is slightly enhanced to 73 K compared to the monolayer CrSnSe3. We have found the valley splitting of 4 meV in S-1 whereas it became 9 meV in the S-2 system. The valley splitting is further enhanced if an electric field is applied from CrSnSe3 to the WSe2 layer whereas it is suppressed in the reversed electric field. Particularly, the S-2 structure shows a giant valley splitting of 67 meV at an electric field of 0.6 V Å−1. We attribute this electric field-dependency to the dipolar effect. Overall, we propose that the WSe2/CrSnSe3 heterostructure can be a potential structure for obtaining a giant valley splitting. [ABSTRACT FROM AUTHOR]

Phosphorene is receiving great research interests because of its peculiar physical properties. Nonetheless, no systematic studies on the transport properties modified due to defects have been performed. Here, we present the electronic band structure, defect formation energy and bias dependent transport property of various defective systems. We found that the defect formation energy is much less than that in graphene. The defect configuration strongly affects the electronic structure. The band gap vanishes in single vacancy layers, but the band gap reappears in divacancy layers. Interestingly, a single vacancy defect behaves like a p-type impurity for transport property. Unlike the common belief, we observe that the vacancy defect can contribute to greatly increasing the current. Along the zigzag direction, the current in the most stable single vacancy structure was significantly increased as compared with that found in the pristine layer. In addition, the current along the armchair direction was always greater than along the zigzag direction and we observed a strong anisotropic current ratio of armchair to zigzag direction. [ABSTRACT FROM AUTHOR]