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Technologies that capture the complex electrical dynamics occurring in biological systems, across fluid membranes and at solid–liquid interfaces are important for furthering fundamental understanding and innovation in diverse fields from neuroscience to energy storage. However, the capabilities of existing voltage imaging techniques utilizing microelectrode arrays, scanning probes or optical fluorescence methods are limited by resolution, scan speed and photostability, respectively. Here we report an optoelectronic voltage imaging system that overcomes these limitations by using nitrogen-vacancy defects as charge-sensitive fluorescent reporters embedded within a transparent semiconducting diamond device. Electrochemical tuning of the diamond surface termination enables photostable optical voltage imaging with a quantitative linear response at biologically relevant voltages and timescales. This technology represents a major step towards label-free, large-scale and long-term voltage recording of physical and biological systems with sub-micrometre spatial resolution. Nitrogen-vacancy centres in surface-engineered diamond are demonstrated to operate as charge-sensitive fluorescent reporters, enabling an optical scheme for voltage recording in physical and biological systems. [ABSTRACT FROM AUTHOR]

In the scale-up of quantum computers, the framework underpinning fault-tolerance generally relies on the strong assumption that environmental noise affecting qubit logic is uncorrelated (Markovian). However, as physical devices progress well into the complex multi-qubit regime, attention is turning to understanding the appearance and mitigation of correlated — or non-Markovian — noise, which poses a serious challenge to the progression of quantum technology. This error type has previously remained elusive to characterisation techniques. Here, we develop a framework for characterising non-Markovian dynamics in quantum systems and experimentally test it on multi-qubit superconducting quantum devices. Where noisy processes cannot be accounted for using standard Markovian techniques, our reconstruction predicts the behaviour of the devices with an infidelity of 10−3. Our results show this characterisation technique leads to superior quantum control and extension of coherence time by effective decoupling from the non-Markovian environment. This framework, validated by our results, is applicable to any controlled quantum device and offers a significant step towards optimal device operation and noise reduction. As quantum computing devices become more complex, they enter the realm of correlated noise, which is difficult to characterise and mitigate. Here, the authors demonstrate, over a range of superconducting devices, a method for non-Markovian dynamics characterisation based on the process tensor framework. [ABSTRACT FROM AUTHOR]

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16 ± 1 nm. By utilising an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations. [ABSTRACT FROM AUTHOR]

Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions of valleys in momentum space. Addressable single-qubit and two-qubit operations in silicon require that qubits are placed near interfaces, modifying the valley degrees of freedom associated with these quantum superpositions and strongly influencing qubit relaxation and exchange processes. Yet to date, spectroscopic measurements have only probed wavefunctions indirectly, preventing direct experimental access to valley population, donor position and environment. Here we directly probe the probability density of single quantum states of individual subsurface donors, in real space and reciprocal space, using scanning tunnelling spectroscopy. We directly observe quantum mechanical valley interference patterns associated with linear superpositions of valleys in the donor ground state. The valley population is found to be within 5% of a bulk donor when 2.85 ± 0.45 nm from the interface, indicating that valley-perturbation-induced enhancement of spin relaxation will be negligible for depths greater than 3 nm. The observed valley interference will render two-qubit exchange gates sensitive to atomic-scale variations in positions of subsurface donors. Moreover, these results will also be of interest for emerging schemes proposing to encode information directly in valley polarization. [ABSTRACT FROM AUTHOR]

The ability to sensitively detect individual charges under ambient conditions would benefit a wide range of applications across disciplines. However, most current techniques are limited to low-temperature methods such as single-electron transistors, single-electron electrostatic force microscopy and scanning tunnelling microscopy. Here we introduce a quantum-metrology technique demonstrating precision three-dimensional electric-field measurement using a single nitrogen-vacancy defect centre spin in diamond. An a.c. electric-field sensitivity reaching 202±6 V cm−1 Hz−1/2 has been achieved. This corresponds to the electric field produced by a single elementary charge located at a distance of ∼150 nm from our spin sensor with averaging for one second. The analysis of the electronic structure of the defect centre reveals how an applied magnetic field influences the electric-field-sensing properties. We also demonstrate that diamond-defect-centre spins can be switched between electric- and magnetic-field sensing modes and identify suitable parameter ranges for both detector schemes. By combining magnetic- and electric-field sensitivity, nanoscale detection and ambient operation, our study should open up new frontiers in imaging and sensing applications ranging from materials science to bioimaging. [ABSTRACT FROM AUTHOR]

Fluorescent particles are routinely used to probe biological processes. The quantum properties of single spins within fluorescent particles have been explored in the field of nanoscale magnetometry, but not yet in biological environments. Here, we demonstrate optically detected magnetic resonance of individual fluorescent nanodiamond nitrogen-vacancy centres inside living human HeLa cells, and measure their location, orientation, spin levels and spin coherence times with nanoscale precision. Quantum coherence was measured through Rabi and spin-echo sequences over long (>10 h) periods, and orientation was tracked with effective 1° angular precision over acquisition times of 89 ms. The quantum spin levels served as fingerprints, allowing individual centres with identical fluorescence to be identified and tracked simultaneously. Furthermore, monitoring decoherence rates in response to changes in the local environment may provide new information about intracellular processes. The experiments reported here demonstrate the viability of controlled single spin probes for nanomagnetometry in biological systems, opening up a host of new possibilities for quantum-based imaging in the life sciences. [ABSTRACT FROM AUTHOR]

The ability to build structures with atomic precision is one of the defining features of nanotechnology. Achieving true atomic-level functionality, however, requires the ability to control the wavefunctions of individual atoms. Here, we investigate an approach that could enable just that. By collecting and analysing transport spectra of a single donor atom in the channel of a silicon FinFET, we present experimental evidence for the emergence of a new type of hybrid molecule system. Our experiments and simulations suggest that the transistor’s gate potential can be used to control the degree of hybridization of a single electron donor state between the nuclear potential of its donor atom and a nearby quantum well. Moreover, our theoretical analysis enables us to determine the species of donor (arsenic) implanted into each device as well as the degree of confinement imposed by the gate. [ABSTRACT FROM AUTHOR]

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes arising from this competition. However, they exploit wavefunctions relying on crystal band symmetries, which tunneling interactions are inherently sensitive to. Here we directly image lattice-aperiodic valley interference between coupled atoms in silicon using scanning tunneling microscopy. Our atomistic analysis unveils the role of envelope anisotropy, valley interference and dopant placement on the Heisenberg spin exchange interaction. We find that the exchange can become immune to valley interference by engineering in-plane dopant placement along specific crystallographic directions. A vacuum-like behaviour is recovered, where the exchange is maximised to the overlap between the donor orbitals, and pair-to-pair variations limited to a factor of less than 10 considering the accuracy in dopant positioning. This robustness remains over a large range of distances, from the strongly Coulomb interacting regime relevant for high-fidelity quantum computation to strongly coupled donor arrays of interest for quantum simulation in silicon. Coupled donor wavefunctions in silicon are spatially resolved to evidence valley interference processes. An atomic-scale understanding of the interplay between interference, envelope anisotropy and crystal symmetries unveils a placement strategy compatible with existing technology where the exchange is insensitive to interference. [ABSTRACT FROM AUTHOR]