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The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics are based on the topological protection and spin-momentum locking of their helical edge states. In this study we present experimental evidence that topological protection can be (partially) lifted by pairwise coupling of 2D TI edges in close proximity. Using direct wave function mapping via scanning tunneling microscopy/spectroscopy (STM/STS) we compare isolated and coupled topological edges in the 2D TI bismuthene. The latter situation is realized by natural lattice line defects and reveals distinct quasi-particle interference (QPI) patterns, identified as electronic Fabry-Pérot resonator modes. In contrast, free edges show no sign of any single-particle backscattering. These results pave the way for novel device concepts based on active control of topological protection through inter-edge hybridization for, e.g., electronic Fabry-Pérot interferometry. New functionalities of two-dimensional topological insulators (2DTI) are of current scientific interest. Here, the authors show that topological protection can be lifted by pairwise coupling of 2DTI bismuthene edges in close proximity. [ABSTRACT FROM AUTHOR]

Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. We now report the discovery of a two-dimensional system with a single, spin-degenerate Dirac valley. We study the transport properties of HgTe quantum wells grown at a critical thickness where the band gap vanishes. In a magnetic field, we observe quantum Hall plateaux that exhibit the anomalous sequence characteristic of Dirac systems. The filling factors at which the plateaux occur are direct evidence of the presence of a single Dirac valley in the system. Also the conductivity at the Dirac point and its temperature dependence can be understood from single valley Dirac fermion physics. Our observations pave the way to study quantum interference and ballistic transport phenomena of Dirac fermions, which so far have been hard to access. [ABSTRACT FROM AUTHOR]

In the spin Hall effect, a current passed through a spin–orbit coupled electron gas induces a spin accumulation of inverse sign on either side of the sample. A number of possible mechanisms have been described, extrinsic as well as intrinsic ones, and they may occur in the ballistic as well as the diffusive transport regime. A central problem for experimentalists in studying the effect is the very small signals that result from the spin accumulation. Electrical measurements on metals have yielded reliable signatures of the spin Hall effect, but in semiconductors the spin accumulation could only be detected by optical techniques. Here we report experimental evidence for electrical manipulation and detection of the ballistic intrinsic spin Hall effect (ISHE) in semiconductors. We perform a non-local electrical measurement in nanoscale H-shaped structures built on high-mobility HgTe/(Hg, Cd)Te quantum wells. When the samples are tuned into the p-regime, we observe a large non-local resistance signal due to the ISHE, several orders of magnitude larger than in metals. In the n-regime, where the spin–orbit splitting is reduced, the signal is at least one order of magnitude smaller and vanishes for narrower quantum wells. We verify our experimental observations by quantum transport calculations. [ABSTRACT FROM AUTHOR]

The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of α/4π per surface. Here we report on the observation of this so-called topological magnetoelectric effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semitransparent gate to selectively address surface states. In high external magnetic fields, we observe a universal Faraday rotation angle equal to the fine structure constant α=e2/2hc (in SI units) when a linearly polarized THz radiation of a certain frequency passes through the two surfaces of a strained HgTe 3D TI. These experiments give insight into axion electrodynamics of TIs and may potentially be used for a metrological definition of the three basic physical constants. [ABSTRACT FROM AUTHOR]