Search

InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narrowing down the potential range of applications. Here, it is demonstrated that quasi two-dimensional (quasi-2D) QWs with thickness of one atomic monolayer can be deposited with indium contents far exceeding this limit, under certain growth conditions. Multi-QW heterostructures were grown by plasma-assisted molecular beam epitaxy, and their composition and strain were determined with monolayer-scale spatial resolution using quantitative scanning transmission electron microscopy in combination with atomistic calculations. Key findings such as the self-limited QW thickness and the non-monotonic dependence of the QW composition on the growth temperature under metal-rich growth conditions suggest the existence of a substitutional synthesis mechanism, involving the exchange between indium and gallium atoms at surface sites. The highest indium content in this work approached 50%, in agreement with photoluminescence measurements, surpassing by far the previously regarded compositional limit. The proposed synthesis mechanism can guide growth efforts towards binary InN/GaN quasi-2D QWs. [ABSTRACT FROM AUTHOR]

Coulomb repulsion among conduction electrons in solids hinders their motion and leads to a rise in resistivity. A regime of electronic phase separation is expected at the first-order phase transition between a correlated metal and a paramagnetic Mott insulator, but remains unexplored experimentally as well as theoretically nearby T = 0. We approach this issue by assessing the complex permittivity via dielectric spectroscopy, which provides vivid mapping of the Mott transition and deep insight into its microscopic nature. Our experiments utilizing both physical pressure and chemical substitution consistently reveal a strong enhancement of the quasi-static dielectric constant ε1 when correlations are tuned through the critical value. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory. Our findings suggest a similar 'dielectric catastrophe' in many other correlated materials and explain previous observations that were assigned to multiferroicity or ferroelectricity. [ABSTRACT FROM AUTHOR]

Copyright of Der Pneumologe is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The electronic transport properties of insulating Si:Ga films with superconducting, Ga-rich nanoprecipitates are investigated in dependence on temperature, current, and magnetic field. The large negative magnetoresistance, observed below the critical temperature can be explained by Cooper pair breaking and subsequent tunneling of the fermionic quasiparticles. Localization due to quantum interferences of bosons or fermions, as recently discussed, seems not to be the reason for the insulating state and the large magnetoresistance. Cooper pair tunneling is blocked by the high Coulomb barrier. The quasiparticles can overcome the barrier by inelastic cotunneling that results in nonlinear current-voltage characteristics and negative electroresistance. Since the experimental results obtained for the Si:Ga film resemble that of many other films with superconducting nanoprecipitates the conclusions drawn here could be quite general. [ABSTRACT FROM AUTHOR]

Copyright of Der Pneumologe is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

We present the formation of an ordered three-dimensional lattice of Ni nanocrystals in an amorphous alumina matrix by a self-assembly process. The self-assembled growth achieved by single-step magnetron sputtering deposition of a Ni/AlO multilayer is driven by surface morphology effects. The influence of the Ni layer thickness on the Ni particle size, separation, and quality of ordering is examined. The quality of Ni nanoparticles ordering in alumina is compared to their ordering in a silica matrix. The obtained results are important for the understanding of the self-assembly process of metallic particles in amorphous matrices and the applications of such materials. [ABSTRACT FROM AUTHOR]

Switch costs in task switching are often assumed to reflect the strengthening of task-related associations. Recently, we provided evidence that committing an error leads to the strengthening of the wrong task (Steinhauser & Hübner, 2006). In the present study, we report how error-induced control compensates for the effects of error strengthening. We hypothesized that, although error detection cannot prevent an error from being strengthened, it initiates processes that suppress the negative consequences of error strengthening on subsequent trials. Because error-induced control is known to operate slowly, we predicted that a compensatory effect should be observable only for slow responses. In three task-switching experiments, these predictions were confirmed by distributional analyses. The results extend our understanding of the interplay between procedural learning and executive control. [ABSTRACT FROM AUTHOR]

We investigated the hypothesis that mixing costs intask shifting reflect th e sequential selection of task components (e.g., stimulus categories) during task execution. This proposition was supported by Hübner, Futterer, and Steinhauser (2001), who showed that the amount of mixing costsdepends on the number of mixed task components (e.g., stimulus level and judgment). However, their results could also be explained by a task set selection account, because task components and task sets were confounded. In Experiments 1 and 2, we compared conditions in which either the number of task sets varied and the number of mixed task components was constant or vice versa. Only the number of mixed task components was predictive for the mixing costs. In Experiment 3, we replicated the additivity of mixing costs from level a ndjudgment mixing. Our results suggest thatthe mixingcosts reflect a selection strategy in which interference is reduced in a stepwise manner. [ABSTRACT FROM AUTHOR]

Structural changes at annealing temperatures (Tan) of 500–1,100°C were investigated for thin Ta films which were sputter-deposited onto pure Si substrates and onto thermally oxidized Si. In the as-deposited state, the Ta layers predominantly consist of metastable tetragonal β-Ta, whereby the [001] texture is independent of the substrate material. At lower annealing temperatures, the microstructural evolution is essentially the same for both Ta films. Incorporation of O atoms causes an increase of the intrinsic compressive stress, and diffusion of C atoms into the Ta layer leads to the formation of Ta2C. Additionally, a partial transformation of the original β-Ta phase into a second phase with tetragonal unit cell (denoted as β′-Ta) occurs. For the Ta/Si system, the formation of a Ta–Si intermixing layer is initiated at Tan=550°C, and nucleation of crystalline TaSi2 occurs at Tan=620°C. The formation of a second Ta silicide was not detected up to Tan=900°C. In the case of the Ta film deposited onto the SiO2 substrate, the metastable β-Ta and the β′-Ta transform completely into the thermodynamically stable cubic α-Ta at Tan=750°C. A marked reaction with the substrate indicated by the formation of Ta2O5 and Ta5Si3 occurs at Tan=1,000°C. [ABSTRACT FROM AUTHOR]

Copyright of Der Internist is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The tolerability and safety of candesartan cilexetil has been evaluated in over 5000 subjects enrolled into double-blind or open-label clinical studies. In double-blind clinical trials in patients with primary hypertension, candesartan cilexetil 2-16 mg once-daily was associated with a low incidence of adverse events and drug-related withdrawals, similar to placebo. The drug showed no evidence of dose-dependent adverse events and it was equally well tolerated by men and women and by elderly (⩾65 years) and younger (<65 years) patients alike. Candesartan cilexetil had no effect on blood glucose control or serum lipid profile in patients with type II diabetes. It was very well tolerated also when given in combination with hydrochlorothiazide or amlodipine and during long-term open-label therapy (up to 1 year). Candesartan cilexetil therefore possesses an excellent tolerability profile that extends to a wide variety of patients including the elderly and it does not aggravate co-existing risk factors such as hyperlipidaemia or glucose intolerance. It therefore appears to offer a better tolerated alternative to other commonly used antihypertensive agents. [ABSTRACT FROM AUTHOR]

Candesartan cilexetil is rapidly and completely hydrolysed to the active compound candesartan during absorption from the gastrointestinal tract. Candesartan is a potent, long-acting, selective angiotensin II AT1 receptor blocker. The pharmacokinetics of candesartan were investigated after single and repeated once-daily doses of candesartan cilexetil in the dose range 2-16 mg in both younger (19-40 years) and elderly (65-78 years) healthy volunteers in five studies. Blood pressure, heart rate, and hormones associated with the renin-angiotensin system, and safety of candesartan cilexetil administration were also assessed. Placebo comparisons were made in four studies. Frequent blood samples were collected after the first single dose of candesartan cilexetil, and during the last dosing interval after 1 week repeated once-daily administration. Serum and plasma were analysed for candesartan cilexetil, candesartan and its inactive metabolite, CV-15959, as well as angiotensin I and II, aldosterone, plasma renin activity (PRA) and angiotensin-converting enzyme (ACE) activity. The AUC and Cmax of candesartan showed dose-proportional increases in the dose range of 2-16 mg candesartan cilexetil after both single and repeated once-daily tablet intake, indicating linear pharmacokinetics in both younger and elderly healthy subjects. The pharmacokinetics did not change on repeated dosing and, as expected from the half-life of candesartan of approximately 9 h in younger subjects, there was almost no accumulation after repeated once-daily dosing. The time to peak candesartan concentrations after tablet intake was consistently approximately 4 h at all dose levels. Both Cmax and AUC of candesartan were increased after single and repeated once-daily dosing in the elderly compared to younger subjects by approximately 50%. However, no accumulation after repeated once-daily dosing were seen in the elderly. The half-life of candesartan in the elderly (9-12 h) was somewhat longer than in the younger healthy adult volunteers (approximately 9 h) and no gender-related differences in the disposition of candesartan were observed. Serum concentrations of CV-15959 were much lower than candesartan, and reached peak serum concentrations later, about 4-9 h after dose intake. The elimination of CV-15959 was somewhat slower than that of candesartan. Candesartan cilexetil, the prodrug to candesartan, was not measurable in serum. No differences in ACE activity or serum aldosterone concentrations were observed between subjects receiving candesartan cilexetil and placebo tablets. Plasma angiotensin I and II concentrations and PRA were augmented after single doses and further increased after 1 week repeated candesartan cilexetil dosing. Single and repeated doses of candesartan cilexetil were well tolerated in the younger and elderly volunteers. Only mild adverse events were recorded, with `headache' as the most commonly reported event, and no increase in the number of reported adverse events was observed with higher doses of candesartan cilexetil. No clinically significant changes in respect to vital signs, physical examination, ECG, and clinical laboratory tests were observed. [ABSTRACT FROM AUTHOR]

Candesartan is a new generation angiotensin II type 1 receptor blocker, characterised by tight binding to and slow dissociation from the receptor. In order to delineate the dose-response curve for candesartan cilexetil (the orally administered prodrug), results from six European placebo-controlled, dose-response studies were pooled. These were of a double-blind, randomised, parallel group design, with a treatment duration of 4-12 weeks. A total of 1482 patients with mild to moderate primary hypertension were treated with candesartan cilexetil 2 mg (n = 80), 4 mg (n = 216), 8 mg (n = 455) or 16 mg (n = 294), or with placebo (n = 437). Blood pressure (BP) measurements were performed 24 h after dose. The differences in BP change (baseline vs end of the studies) between the placebo group and the groups treated with candesartan cilexetil were assessed using analysis of covariance and dose response curves were estimated by fitting the data to an Emax model. The placebo-corrected mean reductions in sitting diastolic BP were approximately 2.5 mm Hg with 2 mg, 4.5 mm Hg with 4 mg, 6 mm Hg with 8 mg, and 8 mm Hg with 16 mg of candesartan cilexetil. For sitting systolic BP, the placebo-corrected mean reductions were in the order of 5, 7, 10 and 12 mm Hg, respectively, with 2, 4, 8 and 16 mg of candesartan cilexetil. The BP reductions were similar in the standing position with no indication of postural hypotension. Age or gender did not influence the BP response to candesartan cilexetil. In conclusion, candesartan cilexetil provides a clinically significant, dose-dependent antihypertensive effect in doses ranging from 4-16 mg once daily. [ABSTRACT FROM AUTHOR]

Primary roots of maize seedlings have been treated with solutions of lanthanum and lead salts in an attempt to demonstrate endocytosis. Subsurface cells in the root cap reveal deposits of these heavy metals in coated pits in the plasma membrane and in coated vesicles. In addition lead deposits were observed in coated evaginations (pits) on large (secretory) vesicles present at the trans-pole of the Golgi apparatus and on small vacuoles. Lead was also found in the peripheral regions of individual cisternae throughout the dictyosomal stack. We interpret our results as providing evidence for coated pit/coated vesicle-mediated endocytosis and for the direct recycling of plasma membrane to the Golgi apparatus. [ABSTRACT FROM AUTHOR]

An analysis of the temperature variation of different moments of electronic absorption and emission bands of defects is given. The relaxation around a lattice defect and the changes of the force constants during an electronic transition are calculated. A Green's function formulation of the single moments allows a compact description of the coupling of all lattice oscillators to the electronic transition by perturbed projected phonon densities. The range of perturbed shells of ions around the defect can easily be adapted to the special model of the center. A numerical discussion for F-centers in KBr gives simultaneously the experimentally observed Stake's shift and half width of the bands for fairly reasonable values of the relaxation parameters (lattice ion displacements and force constants). A plausible explanation is found for the wellknown discrepancy of the effective frequencies which define the temperature behaviour of the half widths in absorption and emission. [ABSTRACT FROM AUTHOR]

Copyright of Klinische Wochenschrift is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)