1. The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.
- Author
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Zhong, Hao, Guo, Anran, Guo, Guohui, Li, Wei, and Jiang, Yadong
- Subjects
LIGHT absorbance ,NANOSTRUCTURED materials ,OPTOELECTRONIC devices ,SILICON surfaces ,CRYSTAL etching ,MICROFABRICATION - Abstract
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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