Search

This paper presents the Ultrasonic Spray Pyrolysis system fabrication of gallium-doped zinc oxide (ZnO:Ga)|cuprous oxide (Cu2O) thin film hetero-junction. The deposition parameters were constant for ZnO:Ga and Cu2O. Structural and optical properties of ZnO:Ga, Cu2O, and ZnO:Ga|Cu2O hetero-junction were characterized by X-Ray Diffraction method and UV–Vis spectrometry, respectively. SEM and FTIR were used to reveal the morphology and the nature of the chemical bonds. The electrical properties were measured by an Keithley I–V source meter. The ZnO:Ga|Cu2O hetero-junction was annealed at 350, 400, and 450°C and the current-voltage characteristics were measured. The band gaps of ZnO, Cu2O, and ZnO:Ga|Cu2O are ~3.27, ~2.65, and ~3.29 eV, respectively. The annealing temperature improves the hetero-junction quality. [ABSTRACT FROM AUTHOR]

We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices. The elaboration process and the characterization phase have been carried out at Nottingham University. The C–V characteristics have been measured at different temperature ranging from 20 to 400 K. The barrier height and effective density were than extracted from 1/(C/A)2 plot using heuristic algorithm which called ALO (Ant Lion Optimizer). The accuracy of the extraction method is verified through the gotten results. [ABSTRACT FROM AUTHOR]