1. Raman spectroscopy of graphene under ultrafast laser excitation.
- Author
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Ferrante, C., Virga, A., Benfatto, L., Martinati, M., De Fazio, D., Sassi, U., Fasolato, C., Ott, A. K., Postorino, P., Yoon, D., Cerullo, G., Mauri, F., Ferrari, A. C., and Scopigno, T.
- Subjects
RAMAN spectroscopy ,ELECTRON-phonon interactions ,HOT carriers ,CHARGE carriers ,LASERS ,RAMAN effect - Abstract
The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron–phonon interactions; however, their non-equilibrium properties in the presence of hot charge carriers are still not fully explored. Here we study the Raman spectrum of graphene under ultrafast laser excitation with 3 ps pulses, which trade off between impulsive stimulation and spectral resolution. We localize energy into hot carriers, generating non-equilibrium temperatures in the ~1700–3100 K range, far exceeding that of the phonon bath, while simultaneously detecting the Raman response. The linewidths of both G and 2D peaks show an increase as function of the electronic temperature. We explain this as a result of the Dirac cones’ broadening and electron–phonon scattering in the highly excited transient regime, important for the emerging field of graphene-based photonics and optoelectronics [ABSTRACT FROM AUTHOR]
- Published
- 2018
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