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The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage. It was recently shown that a voltage could be used to control a supercurrent in superconducting nanostructures, much like a transistor, however, the exact origin of this effect has been debated. Here Elalaily et al. show via noise measurements that the suppression of the supercurrent in the superconducting device arises due to excitation emission by inelastic tunneling of the electrons through the trap states created by stressing the oxide layer between the gate and the NW under a high electric field. [ABSTRACT FROM AUTHOR]

Various promising qubit concepts have been put forward recently based on engineered superconductor subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a superconductor strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a superconductor. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy measurements. Moreover, we demonstrate that its spatial extension increases substantially in a magnetic field. Local magnetic moments coupled to superconductors can form subgap Yu-Shiba-Rusinov states. Here the authors show that Shiba states made with an InAs nanowire quantum dot have large spatial extent, which is beneficial for making Shiba chains that are predicted to host Majorana zero modes. [ABSTRACT FROM AUTHOR]