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Continuous layers and precipitates of the β-FeSi2 phase were formed by ion-beam synthesis followed by rapid thermal annealing. Two steps of Fe+ ion implantation in Si, at energies of 20 and 60 keV, were performed, using three different doses – 5×1015, 5×1016, and 1017 cm−2. The infrared spectra were used as a criterion for the formation of the β-FeSi2 phase. The refractive-index-energy dependences were calculated from the transmittance and reflectance spectra, using the general matrix method. From these dependences, the energy band gap and the energies of the higher-energy transitions in the vicinity of the gap were determined. [ABSTRACT FROM AUTHOR]