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We report on the dynamics of a magnetic-field-driven antiferromagnetic-to-paramagnetic quantum phase transition in monocrystalline Ce3Al via transverse-field muon spin rotation (TF-µSR) experiments down to low temperature of ∼ 80 mK. The quantum phase transition is of a spin-flip type and takes place on the Ce–Al magnetic chains as a result of competition between the indirect exchange and the Zeeman interaction of the Ce moments with the external field, applied along the chain direction (also the direction of the antiferromagnetic axis). The Ce moments are not static at T → 0, but fluctuate in their direction due to the Heisenberg uncertainty principle. Upon applying the magnetic field sweep, the fluctuations exhibit the largest amplitude at the quantum critical point, manifested in a maximum of the muon transverse relaxation rate at the critical field. The quantum nature of fluctuations observed in the TF-µSR experiments is reflected in the temperature independence of the average local magnetic field component along the external magnetic field at the muon stopping site(s) and the muon transverse relaxation rate within the investigated temperature range 1.5 K–80 mK. Quantum fluctuations are fast on the muon Larmor frequency scale, τ 0 < 10–10 s. [ABSTRACT FROM AUTHOR]

The residual stress in Al–Cu–Fe–B quasicrystalline thin films has been characterized by x-ray diffraction and the curvature method. Films with thicknesses in a range from 0.55 to 2.6 μm were deposited using magnetron sputtering on Si(100) substrates maintained at a temperature of 560 °C. It is found that the tensile stress in uncracked films as determined by the curvature method is close to that measured by a modified sin2ψ method using main diffraction peaks of the icosahedral structure and corresponds approximately to 1.1 GPa. This value is close to that of the thermal stress estimated from the mismatch between thermal expansion coefficients of the film and substrate, suggesting that thermal stress is the main source of residual stress. Increasing film thickness results in the development of cracks and partial delamination of the film, accompanied by the sudden decrease of the stress. The fracture toughness of the quasicrystalline films is estimated between 1.5 and 1.9 MPa$\sqrt {\rm{m}}$. [ABSTRACT FROM PUBLISHER]