1. Interface modulation and resistive switching evolution in Pt/NiO/AlO/n-Si structure.
- Author
-
Zhai, Haifa, Liu, Xiaojie, Cao, Yanqiang, Kong, Jizhou, Qian, Xu, Cao, Zhengyi, Li, Aidong, Xia, Yidong, and Wu, Di
- Subjects
PLATINUM ,NICKEL oxides ,ALUMINUM oxide ,ANNEALING of metals ,SILICON ,CRYSTAL structure ,SWITCHING circuits - Abstract
The resistive switching evolution of NiO/AlO in Pt/NiO/AlO/n-Si structure was investigated with postannealing time. When increasing the postannealing time, larger voltage/current is needed to turn on/turn off the structure, respectively. Large memory resistance window can be obtained by the interface modulation of NiO/AlO. For the fresh structure, the low resistance state (LRS) obeys Ohmic conduction mechanism and the high resistance state (HRS) fits Poole-Frenkel-like behavior. With the postannealing time increase, the reaction between NiO and AlO occurs. Finally, the Pt/Ni-Al-O/n-Si structure forms. Schottky emission mechanism has dominated in the HRS, while the LRS shows Poole-Frenkel-like behavior. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF