1. Design and Analysis of HEMT by 5 nm Technology.
- Author
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Kondavitee, Girija Sravani, Rao, K. Srinivasa, Suman, M., Pravallika, B., Annapurna, K. Sravani, Vaishnavi, G., Ramya, K. Ruth, and Aditya, M.
- Abstract
This paper presents the design and simulations of 5 nm HEMT. The analysis of analog parameters, electrical parameters and the RF performance of the 5 nm HEMT has been done using SILVACO TCAD tool. Here we have designed the HEMT with different materials such as AlGaAs /GaAs / SiC and the high k dielectric material HfO
2 . The drain current Ids aquired for the HfO2 dielectric material in the 5 nm technology HEMT is 1.4 × 10-7 Amperes which is efficient when contrast with SiO2 dielectric. The DIBL value obtained is 0.12 mV/V.By using SILVACO we have measured the transfer and output characteristic plots, threshold voltage(Vth), transconductance(Gm), cut-off frequency, saturation current(Idss). The short channel effects are minimized and the designed structure can be used at high frequency applications. [ABSTRACT FROM AUTHOR]- Published
- 2023
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