101. Samarium-induced enhancement of SiOx decomposition and Si nanocrystals formation.
- Author
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Michailovska, Katerina V., Indutnyi, Ivan Z., Shepeliavyi, Petro E., Sopinskyy, Mykola V., Dan'ko, Viktor A., Tsybrii, Zinoviia F., and Nikolenko, Andrii S.
- Subjects
SAMARIUM ,RAMAN spectroscopy ,SPECTRUM analysis ,NANOCRYSTALS ,PHOTOLUMINESCENCE - Abstract
The effect of Sm on thermally stimulated decomposition of SiO
x and the formation of silicon nanocrystals during high-temperature air annealing was studied by measuring the spectra of photoluminescence (PL), infrared (IR) reflection and transmission and Micro-Raman scattering (RS). The SiOx : Sm films were produced by thermal co-evaporation of silicon monoxide and metallic samarium powders in a vacuum onto polished c-Si and silica substrates. The Sm concentration varied from 0.8 to 2.0 wt. %. In the SiOx : Sm films annealed at 970 ºC, an intense PL band of silicon nanocrystals was found in the 850–900 nm region, the position and intensity of which depend on the samarium concentration. The formation of Si nanocrystals in those films is also confirmed by studying their Raman spectra. At the same time, no Si nanocrystals were found in undoped SiOx films annealed under similar conditions. The analysis of these spectra made it possible to determine the sizes of silicon nanocrystals: 3.7 nm from the PL spectra and 3.6 nm from the Raman spectra. A possible mechanism of thermally stimulated interaction of Sm atoms with the SiOx matrix is discussed. [ABSTRACT FROM AUTHOR]- Published
- 2023
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