1. Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.
- Author
-
Voronina, T. I., Lagunova, T. S., Moiseev, K. D., Rozov, A. E., Sipovskaya, M. A., Stepanov, M. V., Sherstnev, V. V., and Yakovlev, Yu. P.
- Subjects
INDIUM compounds ,SEMICONDUCTORS ,CRYSTALS - Abstract
The electrical properties of epitaxial InAs and solid solutions based on it (InGaAsSb, InAsSbP, InAsGa, InAsP) have been investigated. It is shown that intentionally undoped crystals have n-type conductivity, which is determined by shallow donor impurities (E[sub 1] = 0.002-0.003 eV) and structural defects (E[sub 2] = 0.02-0.03 eV and E[sub 3] = 0.09-0.10 eV). It is shown that growth of epitaxial InAs using the neutral solvent Pb and also rare-earth elements makes it possible to reduce the electron density by almost an order of magnitude (to levels as low as 3 × 10[sup 15] cm[sup -3]) due to due to a decrease in the density of structural defects. [ABSTRACT FROM AUTHOR]
- Published
- 1999
- Full Text
- View/download PDF