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We demonstrate a novel avalanche photodiode (APD) design which fundamentally relaxes the trade-off between responsivity and saturation-current performance at receiver end in coherent system. Our triple In0.52Al0.48As based multiplication (M-) layers with a stepped electric (E-) field inside has more pronounced avalanche process with significantly less effective critical-field than the dual M-layer. Reduced E-field in active M-layers ensures stronger E-field allocation to the thick absorption-layer with a smaller breakdown voltage (Vbr) resulting in less serious space-charge screening effect, less device heating at high output photocurrent. Compared to the dual M-layer reference sample, the demonstrated APD exhibits lower punch-through (− 9 vs. − 24 V)/breakdown voltages (− 43 vs. − 51 V), higher responsivity (19.6 vs. 13.5 A/W), higher maximum gain (230 vs. 130), and higher 1-dB saturation-current (> 5.6 vs. 2.5 mA) under 0.95 Vbr operation. Extremely high saturation-current (> 14.6 mA), high responsivity (7.3 A/W), and decent O-E bandwidth (1.4 GHz) can be simultaneously achieved using the demonstrated APD with a 200 µm active window diameter. In coherent FMCW LiDAR test bed, this novel APD exhibits a larger signal-to-noise ratio and high-quality 3-D images than the reference dual M-layer and high-performance commercial p-i-n PD modules, while requiring significantly less optical local-oscillator (LO) power (0.5 vs 4 mW). [ABSTRACT FROM AUTHOR]

Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communication systems and quantum cryptography. In the past 5 years experimental fabrication of single-photon avalanche detectors within conventional complementary metal–oxide–semiconductor technology and by the method of molecular beam epitaxy have made possible many demonstrations of avalanche photodetectors with exceptional performance characteristics and opened wide perspectives for development of devices of new generation. In this work, we review state-of-the-art designs of single-photon avalanche photodiodes based on group IV materials, their operating characteristics, and achieved values of basic parameters, as well as the methods of their synthesis, and outline the perspectives of using such structures in emerging device applications. [ABSTRACT FROM AUTHOR]

The past decade has witnessed a dramatic increase in interest in emerging photodetectors built from two-dimensional (2D) layered materials. A major driver of this trend is the growing demands for lightweight, uncooled, and even flexible photodetection technology. However, 2D layered materials always suffer from low light absorption coefficients due to their atomically thin nature. Impact ionization, which can achieve carrier multiplication, is a promising strategy to design 2D photodetectors with high detection efficiency. In this review, typical types of photodetection mechanisms in 2D photodetectors are first summarized. We then discuss the avalanche mechanism induced by impact ionization and avalanche photodetectors based on conventional silicon and III–V compound semiconductors. Finally, a host of emerging avalanche photodetectors based on 2D materials and their van der Waals heterostructures, and their potential applications in the field of photon-counting technologies are detailed. By reviewing the recent progress and discussing challenges faced by 2D avalanche photodetectors, this review aims to provide perspectives on future research directions of 2D material-based ultrasensitive photodetectors such as single-photon detectors. [ABSTRACT FROM AUTHOR]

This paper surveys recent research on CMOS silicon avalanche photodiodes (SiAPD) and presents the design of a SiAPD based photoreceiver dedicated to near-infrared spectroscopy (NIRS) application. Near-infrared spectroscopy provides an inexpensive, non-invasive, and portable means to image brain function, and is one of the most efficient diagnostic techniques of different neurological diseases. In NIRS system, brain tissue is penetrated by near-infrared (NIR) radiation and the reflected signal is captured by a photodiode. Since the reflected NIR signal has very low amplitude, SiAPD is a better choice than regular photodiode for NIR signal detection due to SiAPD`s ability to amplify the photo generated signal by avalanche multiplication. Design requirements of using CMOS SiAPDs for NIR light detection are discussed, and the challenges of fabricating SiAPDs using standard CMOS process are addressed. Performances of state-of-the-art CMOS SiAPDs with different device structures are summarized and compared. The efficacy of the proposed SiAPD based photoreceiver is confirmed by post layout simulation. Finally, the SiAPD and its associated circuits has been implemented in one chip using 0.35 μm standard CMOS technology for an integrated NIRS system. [ABSTRACT FROM AUTHOR]

Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer. [ABSTRACT FROM AUTHOR]

In classical optical time domain reflectometries (OTDRs), for sensing an 200-km-long fiber, the optical pulses launched are as wide as tens of microseconds to get enough signal-to-noise ratio, while it results in a two-point resolution of kilometers. To both reach long sensing distance and sub-kilometer resolution, we demonstrated a long-haul photon-counting OTDR using a superconducting nanowire single-photon detector. In a 40-minute-long measurement, we obtained a dynamic range of 46.9 dB, corresponding to a maximum sensing distance of 246.8 km, at a two-point resolution of 0.1 km. The time for measuring fiber after 100 km was reduced to one minute, while the fiber end at 217 km was still distinguished well from noise. After reducing the pulse width to 100 ns, the experimental two-point resolution was improved to 20 m while the maximum sensing distance was 209.47 km. [ABSTRACT FROM AUTHOR]