1. Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector.
- Author
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Zhang, Yonghui, Liang, Huili, Xing, Fei, Gao, Qiqian, Feng, Yu, Sun, Yuping, and Mei, Zengxia
- Abstract
Polarization-sensitive photodetection and imaging have great application value in fields such as polarization division multiplexing optical communication, remote sensing, near-field imaging and military monitoring. Pursuing a high polarization ratio has always been the research hotspot in polarization-sensitive photodetectors. In this paper, we report a compression strain enhanced polarization ratio in β-gallium oxide (β-Ga
2 O3 ) single crystal flake. A rigorous crystallographic analysis confirmed its high crystalline quality and orientation. Angle-resolved polarization Raman spectroscopy (ARPRS) was adopted to study the anisotropy of its optical properties. Extensive ARPRS measurements and theoretical calculation consistently demonstrate the strong optical anisotropy in the high-quality β-Ga2 O3 flake. A polarization ratio of 0.96 was obtained in the flat β-Ga2 O3 flake. Furthermore, mechanical strain of ±0.7% was introduced into β-Ga2 O3 . An increased polarization ratio of 0.98 was achieved in the case of 0.7% compression strain, which is, to the best of our knowledge, the highest value for UVC polarization-sensitive photodetectors. That corresponds to an improved polarization rejection ratio of 100. This work proposed a new path towards improving polarization sensitivity by applying strain engineering in the active material. [ABSTRACT FROM AUTHOR]- Published
- 2024
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