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Highlights: A strategy based on metal-organic decomposition is proposed to enhance the tube-tube interactions of carbon nanotubes (CNTs). The robust tube-tube interactions of CNTs enhance both EMI shielding performance and mechanical properties of CNT film. This innovative approach provides an effective way to obtain high-performance CNT film. The remarkable properties of carbon nanotubes (CNTs) have led to promising applications in the field of electromagnetic interference (EMI) shielding. However, for macroscopic CNT assemblies, such as CNT film, achieving high electrical and mechanical properties remains challenging, which heavily depends on the tube–tube interactions of CNTs. Herein, we develop a novel strategy based on metal–organic decomposition (MOD) to fabricate a flexible silver–carbon nanotube (Ag–CNT) film. The Ag particles are introduced in situ into the CNT film through annealing of MOD, leading to enhanced tube–tube interactions. As a result, the electrical conductivity of Ag–CNT film is up to 6.82 × 105 S m−1, and the EMI shielding effectiveness of Ag–CNT film with a thickness of ~ 7.8 μm exceeds 66 dB in the ultra-broad frequency range (3–40 GHz). The tensile strength and Young's modulus of Ag–CNT film increase from 30.09 ± 3.14 to 76.06 ± 6.20 MPa (~ 253%) and from 1.12 ± 0.33 to 8.90 ± 0.97 GPa (~ 795%), respectively. Moreover, the Ag–CNT film exhibits excellent near-field shielding performance, which can effectively block wireless transmission. This innovative approach provides an effective route to further apply macroscopic CNT assemblies to future portable and wearable electronic devices. [ABSTRACT FROM AUTHOR]

Highlights: A flexible freestanding TaS2 film (thickness = 3.1 μm) exhibits an ultralow void ratio of 6.01%, an ultra-high electrical conductivity of 2,666 S cm−1, an electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, an absolute EMI SE (SSE/t) of 27,859 dB cm2 g−1, and excellent flexibility withstand 1,000 bends without rupture. The TaS2 composite films exhibit excellent EMI shielding properties and higher tensile strength with better mechanical flexibility, making them suitable for EMI shielding practical applications. Low-dimensional transition metal dichalcogenides (TMDs) have unique electronic structure, vibration modes, and physicochemical properties, making them suitable for fundamental studies and cutting-edge applications such as silicon electronics, optoelectronics, and bioelectronics. However, the brittleness, low toughness, and poor mechanical and electrical stabilities of TMD-based films limit their application. Herein, a TaS2 freestanding film with ultralow void ratio of 6.01% is restacked under the effect of bond-free van der Waals (vdW) interactions within the staggered 2H-TaS2 nanosheets. The restacked films demonstrated an exceptionally high electrical conductivity of 2,666 S cm−1, electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, and absolute EMI SE (SSE/t) of 27,859 dB cm2 g−1, which is the highest value reported for TMD-based materials. The bond-free vdW interactions between the adjacent 2H-TaS2 nanosheets provide a natural interfacial strain relaxation, achieving excellent flexibility without rupture after 1,000 bends. In addition, the TaS2 nanosheets are further combined with the polymer fibers of bacterial cellulose and aramid nanofibers via electrostatic interactions to significantly enhance the tensile strength and flexibility of the films while maintaining their high electrical conductivity and EMI SE.This work provides promising alternatives for conventional materials used in EMI shielding and nanodevices. [ABSTRACT FROM AUTHOR]

Dynamic mitigation for the tearing mode instability in the current sheet in collisionless plasmas is demonstrated by applying a wobbling electron current beam. The initial small amplitude modulations imposed on the current sheet induce the electric current filamentation and the reconnection of the magnetic field lines. When the wobbling or oscillatory motion is added from the electron beam having a form of a thin layer moving along the current sheet, the perturbation phase is mixed and consequently the instability growth is saturated remarkably, like in the case of the feed-forward control. [ABSTRACT FROM AUTHOR]

Highly conductive and flexible graphene-based microtubes (μ-GTs) have many potential applications in catalyst supports and wearable electronics. However, there is a lack of effective method to fabricate the high-performance μ-GTs, especially the multi-channel ones. In this work, the electrostatic spray deposition technique was introduced to fabricate the graphene oxide-coated polyester thread from cost-efficient graphene oxide suspensions. After the polyester thread template was removed along with the reduction of graphene oxide by thermal annealing, the multi-channel μ-GT was prepared successfully. Due to the multiple structure of the cross section and the vertically aligned reduced graphene oxide sheets of the tube wall, the multi-channel μ-GT exhibits many excellent properties, such as highly conductive, good flexibility, and functionalization. For example, the electrical conductivity of the multi-channel μ-GT thermally reduced at 1200 °C is about 1.99 × 104 S m−1 at room temperature and can light a LED as a conductive wire. And the electrical conductivity is nearly invariable in either the straight or bent state though a cyclic bending test up to 800 times. In addition, the TiO2/multi-channel μ-GT composite shows strong photocurrent response in which the multi-channel μ-GT provides a super platform due to the high specific surface area. The high-performance μ-GTs obtained by the simple method opens the immense potentials for application in wearable devices. [ABSTRACT FROM AUTHOR]

Flash memory devices-that is, non-volatile computer storage media that can be electrically erased and reprogrammed-are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(iv)O3)2]4− as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(v)2O6]2− moiety containing a {Se(v)-Se(v)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call 'write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit. [ABSTRACT FROM AUTHOR]