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Some of the recent measurements carried out on semiconductor nanostructures using the far-infrared and high magnetic field facilities of the High Field Magnet Laboratory of the University of Nijmegen are reviewed. In addition, a brief summary of high field studies of other semiconductor systems is given.

Recent work on far-infrared and interband magneto-optical studies done at the High Field Magnet Laboratory of the University of Nijmegen will be reviewed.

The resonant coupling of the subband-Landau-levels in the two-dimensional electron gas (2DEG) of high mobility GaAs-AlGaAs heterojunctions has been studied using cyclotron resonance (CR). When the applied magnetic field has a component in the plane of the 2DEG, the electron motion parallel and perpendicular to the interface is coupled and the degeneracy of Landau levels belonging to different electric subbands will be lifted; this coupling will lead to hybridisation of the subband-Landau-levels. A splitting of the CR is observed when ℏωc coincides with the transition energy E 10 between the two lowest subbands [1]. This effect was observed some time ago by SCHLESINGER, HWANG and ALLEN [2].