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In this paper, we are reporting for the first time, the piezosensing characterisations of the SiC thin film on silicon, synthesized from boron containing Liquid Polycarbosilane (PCS) as a precursor deposited by Modified Chemical Vapour Deposition (MoCVD) technique followed by the structural characterisation of the film. Comparison was done on the result of the both undoped and doped SiC thin film to highlight the effect of boron doping on the piezo property of the SiC. Interestingly, it was observed that piezoelectric coefficient (d33) of the boron doped SiC thin film was substantially higher (21.33 pm/V) than the undoped SiC thin film (16.21 pm/V). The enhancement in d33 was analysed considering the polarisation inside the thin film created by boron doping. The result shows a promising boron doped SiC thin film material for the application in high temperature piezo sensors.

In this paper, we are reporting for the first time, the piezosensing characterisations of the SiC thin film on silicon, synthesized from boron containing Liquid Polycarbosilane (PCS) as a precursor deposited by Modified Chemical Vapour Deposition (MoCVD) technique followed by the structural characterisation of the film. Comparison was done on the result of the both undoped and doped SiC thin film to highlight the effect of boron doping on the piezo property of the SiC. Interestingly, it was observed that piezoelectric coefficient (d33) of the boron doped SiC thin film was substantially higher (21.33 pm/V) than the undoped SiC thin film (16.21 pm/V). The enhancement in d33 was analysed considering the polarisation inside the thin film created by boron doping. The result shows a promising boron doped SiC thin film material for the application in high temperature piezo sensors.

In this paper, we are reporting for the first time, the piezosensing characterisations of the SiC thin film on silicon, synthesized from boron containing Liquid Polycarbosilane (PCS) as a precursor deposited by Modified Chemical Vapour Deposition (MoCVD) technique followed by the structural characterisation of the film. Comparison was done on the result of the both undoped and doped SiC thin film to highlight the effect of boron doping on the piezo property of the SiC. Interestingly, it was observed that piezoelectric coefficient (d33) of the boron doped SiC thin film was substantially higher (21.33 pm/V) than the undoped SiC thin film (16.21 pm/V). The enhancement in d33 was analysed considering the polarisation inside the thin film created by boron doping. The result shows a promising boron doped SiC thin film material for the application in high temperature piezo sensors.