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3 results on '"Giovanni Mascali"'

1. Charge Transport in Low Dimensional Semiconductor Structures : The Maximum Entropy Approach

Author

Vito Dario Camiola, Giovanni Mascali, Vittorio Romano, Vito Dario Camiola, Giovanni Mascali, and Vittorio Romano

Subjects
Mathematical physics, Engineering mathematics, Engineering—Data processing, Nanotechnology
Abstract

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

Published
2020

2. Extended hydrodynamical models for charge transport in Si

Author

Giovanni Mascali, Vittorio Romano, and Roberto Beneduci

Subjects
Physics, State variable, Silicon, chemistry, Phonon, Scattering, Principle of maximum entropy, Quantum electrodynamics, Scalar (physics), chemistry.chemical_element, Charge (physics), Electron
Abstract

In this paper we present a hierarchy of extended hydrodynamical models for electron transport in Silicon, which differ from each other for the number of scalar and vector moments of the electron distribution function used as state variables. The closure of the moment equations is achieved by means of the Maximum Entropy Principle. The main scattering mechanisms between electrons and phonons are taken into account. An application to the case of bulk Silicon is presented.

Published
2007

3. On the fomulation and lumped equivalents extraction techniques for the efficient modeling of long interconnects

Author

Antonio Maffucci, L. De Tommasi, M. de Magistris, G. Miano, A. MARCELLO ANILE, GIUSEPPE AL, GIOVANNI MASCALI, DE MAGISTRIS, Massimiliano, DE TOMMASI, Luciano, A., Maffucci, and Miano, Giovanni

Subjects
Transmission lines, Interconnects, Computer science, Lumped models, Lossy compression, Admittance parameters, Reference test, Electric power transmission, Transmission line, Characteristic admittance, Interconnect, Principal part, Equivalent circuit, Algorithm
Abstract

The paper investigates some crucial aspects in the derivation of efficient time-domain equivalent circuits of lossy multiconductor transmission lines. We firstly highlight the possibility to achieve an exact extraction of the delays from the propagation operators in the Multi Transmission Line model. This provides best properties for defining regular remainders of describing operators to be identified. Secondly, we address the problem of representation of such remainders, showing how a proper “rank” condition on the residue matrices leads directly to a minimal order circuit, so improving the accuracy of the procedure. The proposed formulation and identification procedure are then applied to a reference test case and results are compared to a more traditional approach.

Published
2006

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