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Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service.

Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation approach. The occurrence of irreversible deformation of the microstructure and wear-out under such conditions were demonstrated. The observed microstructures consist of interfacial and inter-granular cracks concentrated in zones of stress intensity, i.e., near heels and emanating from interface precracks. Interfacial voids were also observed within the bond interior. Degradation rates of ‘first’ and ‘stitch’ bonds are compared and contrasted. A correlative microscopy study combining perspectives from optical microscopy with the x-ray tomography results clarifies the damage observed. An estimation of lifetime is made from the results and discussed in the light of existing predictions.

Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service.

Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation approach. The occurrence of irreversible deformation of the microstructure and wear-out under such conditions were demonstrated. The observed microstructures consist of interfacial and inter-granular cracks concentrated in zones of stress intensity, i.e., near heels and emanating from interface precracks. Interfacial voids were also observed within the bond interior. Degradation rates of ‘first’ and ‘stitch’ bonds are compared and contrasted. A correlative microscopy study combining perspectives from optical microscopy with the x-ray tomography results clarifies the damage observed. An estimation of lifetime is made from the results and discussed in the light of existing predictions.

Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service.

Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation approach. The occurrence of irreversible deformation of the microstructure and wear-out under such conditions were demonstrated. The observed microstructures consist of interfacial and inter-granular cracks concentrated in zones of stress intensity, i.e., near heels and emanating from interface precracks. Interfacial voids were also observed within the bond interior. Degradation rates of ‘first’ and ‘stitch’ bonds are compared and contrasted. A correlative microscopy study combining perspectives from optical microscopy with the x-ray tomography results clarifies the damage observed. An estimation of lifetime is made from the results and discussed in the light of existing predictions.

Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service.

Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation approach. The occurrence of irreversible deformation of the microstructure and wear-out under such conditions were demonstrated. The observed microstructures consist of interfacial and inter-granular cracks concentrated in zones of stress intensity, i.e., near heels and emanating from interface precracks. Interfacial voids were also observed within the bond interior. Degradation rates of ‘first’ and ‘stitch’ bonds are compared and contrasted. A correlative microscopy study combining perspectives from optical microscopy with the x-ray tomography results clarifies the damage observed. An estimation of lifetime is made from the results and discussed in the light of existing predictions.

Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service.

Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation approach. The occurrence of irreversible deformation of the microstructure and wear-out under such conditions were demonstrated. The observed microstructures consist of interfacial and inter-granular cracks concentrated in zones of stress intensity, i.e., near heels and emanating from interface precracks. Interfacial voids were also observed within the bond interior. Degradation rates of ‘first’ and ‘stitch’ bonds are compared and contrasted. A correlative microscopy study combining perspectives from optical microscopy with the x-ray tomography results clarifies the damage observed. An estimation of lifetime is made from the results and discussed in the light of existing predictions.