1. Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons
- Author
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Nicholas W. M. Ritchie, Nicholas K. Eib, and David F. Kyser
- Subjects
010302 applied physics ,Photon ,Materials science ,Mechanical Engineering ,Extreme ultraviolet lithography ,02 engineering and technology ,Electron ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Resist ,Extreme ultraviolet ,Physics::Space Physics ,0103 physical sciences ,Cathode ray ,Astrophysics::Solar and Stellar Astrophysics ,Astrophysics::Earth and Planetary Astrophysics ,Electrical and Electronic Engineering ,Atomic physics ,0210 nano-technology ,Absorption (electromagnetic radiation) ,Electron-beam lithography - Abstract
The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to calculate the energy density as a function of the incident aerial flux (EUV: mJ/cm2, EB: μC/cm2). Monte Carlo calculations for electron exposure are utilized, and a Lambert–Beer model for EUV absorption. The ratio of electron flux to photon flux which results in equivalent energy density is calculated for a typical organic chemically amplified resist film and a typical inorganic metal-oxide film. This ratio can be used to screen EUV resist materials with EB measurements and accelerate advances in EUV resist systems.
- Published
- 2016
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