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We report on successful fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers emitting around 2.3μm. Second-order Bragg gratings of chromium were patterned by electron beam lithography. For 1.5-mm-long laser diode, single mode continuous-wave operation with output power of 10mW is obtained. The devices show a stable single mode operation with high side mode suppression ratio.

Here we report the growth method of InGa/GaAs quantum dot (QD) with differnet QD density by manipulating InAs deposition rate from 0.065 ML/s to 0.1 ML/s. Chose the highest density QD as the active region and grow multilayer InAs/GaAs QD with high uniform. Then fabricate a narrow ridge waveguide laser by semiconductor process. The rigid waveguide is 1.8 um high and 5 um wide, and the cavity length is 1mm. The output power of this narrow-rigid laser is 164 mW and central wavelength is 1204.6 nm when the injection current is 0.5 A at 15°C. The threshold current is as low as 35 mA, and threshold current density is 1939 A/cm2.

Here we report the solid source molecular beam epitaxy (MBE) growth of high quality of InGaAs/ GaAs quantum dot (QD) structures. A laser device is fabricated by the semiconductor process, including Lithography, Inductively Coupled Plasma (ICP), Plasma Enhanced Chemical Vapor Deposition (PECVD) and Reactive Ion Etching (RIE). The rigid is 100μm wide and cavity is 2000um long. Room temperature continuous-wave (CW) operation with emission wavelength around 1.31μm is presented. Threshold current (Ith) and threshold current density (Jth) is 0.3A and 150A/cm2 at 15°, and output power at Ith=7A reached as high as 1.079W. We also observe that the spectrum shift from 1315nm to 1333nm when the injection currents increase from 1.5A to 3.5A, and the shift speed is 8.72 nm/A.