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3. Thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrate

4. Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure

6. Subwavelength antimonide infrared detector coupled with dielectric resonator antenna

8. InAs/AlSb type II superlattice avalanche photodiodes (Erratum)

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