21 results on '"Lin, Qunying"'
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2. Radial segmentation approach for contact hole patterning in 193 nm immersion lithography
3. Circular apertures for contact hole patterning in 193-nm immersion lithography
4. Line end shortening and corner rounding for novel off-axis illumination source shapes
5. Customized illumination shapes for 193nm immersion lithography
6. A comparative study for mask defect tolerance on phase and transmission for dry and immersion 193-nm lithography
7. Process window optimization of CPL mask for beyond 45nm lithography
8. The study of chromeless phase lithography (CPL) for 45nm lithography
9. Polarization impact on partially coherent imaging
10. Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithography
11. Dipole options for 90-nm lithography technologies and below
12. MEF studies for attenuated phase-shift mask for sub-0.13-μm technology using 248 nm
13. Sub-0.10-μm lithography technology with resolution enhancement technique
14. Impact of transmission error for attenuated phase-shift mask for 0.10-μm technology
15. Characterization of assist features on impact of mask error enhancement factors for sub-0.13-um technology
16. Application of attenuated phase-shifting masks to sub-130-nm lithography
17. Mask error enhancement factor for sub-0.13-μm lithography
18. Advanced KrF chemical amplified photoresists for 0.13-μm lithography
19. Effects of process parameters on pattern-edge roughness of chemically amplified resists
20. 0.18-μm lithography strategies: 248-nm DUV step-and-scanner and advanced chemical amplified resist
21. Dual-layer inorganic SiON bottom ARC for 0.25-μm DUV hard mask applications
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