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Two dimensional carbon nanostructures (carbon nanosheets) are fabricated using Hot Wire Chemical Vapor Deposition (HWCVD) technique assisted by H radical injection, using CH 4 as source gas. Carbon nanosheets are grown on crystalline Si(100) wafer as well as on corning glass substrat e without using catalyst. The grown carbon nanosheets are aligned vertically on the substrate with thickness in the range of 10-20 nm and about 60-80 nm in height. Carbon nanosheets, HWCVD 1. INTRODUCTION Two dimensional carbon nanostructures (carbon nanosheets) ha ve a wall structure which consist of graphene. It has sp 2 bonded carbon atoms in a honeycomb network. The graphene crystal lattice is considered to be the basic building block of other importa nt allotropes of carbon materials such as graphite (3D), nanotube (1D), and fullerenes (0D). From the application point of view, some of the most interesting properties of graphene are: very high carrier mobility up to ~25000cm 2 V -1 s -1 [1] and high thermal conductivity in the range of 3080-5150 W/m-K [2] at room temperature. The elastic modulus and the intrinsic strength of defect free monolayer graphene sheets are measured to be 1.0 TPa and 130 GPa, respectively [3]. The enhancement in current and heat conduction properties are beneficial for electronic, interconnect and thermal application of graphene. It has also been demonstrated that graphene devices can operate at very low-levels of the electronics flicker noise, which is important for the application in sensors and communications [4]. A number of methods have been used for the synthesis of graphene sheets. Graphene sheets have been prepared using mechanical [5] and chemical exfoliation [6] of bulk graphite, thermal decomposition of carbon terminated from SiC [7] and Chemical Vapor Deposition (CVD) technique using CH

Nanocrystalline cubic silicon carbide (nc-3C-SiC) films are deposited using hot wire chemical vapour deposition technique at ~350 °C on glass substrates using SiH4 /CH4/H2 as precursor gases. We investigated the influence of total gas pressure on the structural, optical and transport properties of nc-3C-SiC films. Raman scattering spectra and X-ray diffraction patterns revealed that the film prepared below 2 mbar is nanocrustalline silicon (nc-Si), while at ≥ 2 mbar films are nc-3C-SiC. We achieved high deposition rate (≥ 14-20 nm/min), high optical band gap (3.2-3.4 eV) and high conductivity (~ 10-4 -10-2 Ω-1cm-1) suitable for window layer for Solar cells.