Search

In present time six types of siliconorganic materials are commonly used in microelectronic, technology: polysiloxanes, polysilozanes, polysilmethylenes, polysilphenylenes, organic polymers with silicon getheroathorns and polysilanes [1].

A new resist composition based on PMMA-MAA copolymer with antracene additive was exposed by a single pulse of KrFexcimer laser (X =248 nm). Its contrast was found to exceed significantly the limitdetermined by light absorbtion. Studies of the development kinetics of the resist and correspondingtheoretical reasoning justify the assumption of a thermal activated process (boiling of the residual dissolver).1. INTRODUCTION Recently, a new positive UV-photoresist for pulsed excimer laser exposure at X =193 and 248 nm has been reported1. The new resist composition is based on a PMMA-MAA copolymer dissolved 1:9 inethylcellosolveacetate (ECA) with an additive of 1 to 7% of antracene. The contrast ' and the sensitivity D of the new resist were found to be strongly dependent on the mode of exposure. These parameters were relatively poor (D >0.5 J/cm2, '

The exposure of positive photoresists like AZ-2400 and AZ-2415 with pulsed excimer XeCl laser (λ= 308 nm) results in a thresholdlike growth of sensitivity and contrast of the resists [1]. The effect appears when pulse energy density W is in interval 3.106 - 5.106W/cm2, which is little lower than the ablation threshold of the resists - W = 5.10 W/cm2. We called exposure in this interval of W as preablation mode of exposure.© (1987) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.