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A coherent transceiver using a THz quantum cascade laser as the transmitter and an optically pumped molecular laser as the local oscillator has been used, with a pair of Schottky diode mixers in the receiver and reference channels, to acquire high-resolution images of fully illuminated targets, including scale models. Phase stability of the received signal, sufficient to allow coherent image processing of the rotating target (in azimuth and elevation), was obtained by frequency-locking the TQCL to the free-running, highly stable optically pumped molecular laser. While the range to the target was limited by the available TQCL power (several hundred microwatts) and reasonably strong indoor atmospheric attenuation at 2.408 THz (2.0 dB/m at 40% RH), the coherence length of the QCL transmitter will allow coherent imaging over distances up to several hundred meters. In contrast to non-coherent heterodyne detection, coherent imaging allows signal integration over time intervals considerably longer than the reciprocal of the source, or signal bandwidth, with consequent improvement in the signal-to-noise ratio. Image data obtained with the system will be presented.

The fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process where an OP-GaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 μm thick OP-GaAs film was grown on the template at an average rate of ~70 μm/hr by HVPE. The antiphase domain boundaries were observed to propagate vertically and with no defects visible by Nomarski microscopy in stain-etched cross sections. The optical loss at ~2 μm wavelength over an 8 mm long OP-GaAs grating was measured to be no more than that of the semi-insulating GaAs substrate. This template fabrication process can provide more flexibility in arranging the orientation of the crystal domains compared to the Ge growth process and is scalable to quasi-phase-matching (QPM) devices operating from the IR to terahertz frequencies utilizing existing industrial foundries.