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Extremely low-noise O.15jim gate-length V- and W-band InGaAs I InAlAs I InP lattice-matched and pseudomorphic HEMTs have been successfully fabricated. A maximum extrinsic transconductance of 1,500mS/mm and a gate breakdown voltage of more than 1OV have been obtained for the devices. Minimum noise figures of 0.3, 0.9 and and 1.4dB have been measured for the devices at 18, 60 and 94GHz, respectively. We have also measured a maximum available gain of 13.6dB at 95GHz, corresponding to a maximum frequency of oscillation, m' of 455GHz (-6dB/octave extrapolation) with the device. Based on these high performance O.l5Rm devices, a 3-stage hybrid amplifier with a minimum noise figure of 3.3dB and gain of 17.3±0.5dB from 88 to 96GHz has been built. We have also successfully demonstrated for the first time a two-stage InP-based HEMT monolithic microwave integrated circuit (MMIC) with 3.0dB noise figure and 21.0dB gain at 58GHz. These are the best device and amplifier results ever reported. The results are far superior to those obtained from the GaAs-based MESFET and HEMT technology, and clearly demonstrate the potential of the InP-based HEMT technology for very low-noise applications well into the millimeter-wave regime.© (1990) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700mS/mm. At 18GHz, a minimum noise figure of 0.55dB with 15.0dB associated gain was measured. At 94GHz, a minimum noise figure as low as 2.4dB with 5.4dB associated gain was also obtained. This is the best noise performance ever reported for GaAs-based HEMTs.