1. EUV emission of Xe-clusters excited by a high-repetition rate burst mode laser
- Author
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Ulrich Vogt, Matthias Schnürer, Sargis Ter-Avetisyan, Holger Stiel, Peter V. Nickles, and Ingo Will
- Subjects
Materials science ,business.industry ,Extreme ultraviolet lithography ,Energy conversion efficiency ,Pulse duration ,Injection seeder ,Laser ,law.invention ,Wavelength ,Optics ,law ,Extreme ultraviolet ,Optoelectronics ,business ,Burst mode (computing) - Abstract
In this contribution we describe a laser plasma source for Extreme Ultraviolet Lithography (EUVL) based on a Xe-cluster target. Although Xe-clusters as target systems for EUVL are known for some time, no attempts have been made for a systematic study of the influence of the laser parameters on the EUV-emission at a well defined Xe-aggregation. The MBI burst mode laser used offers some unique features: Within one burst (duration 800 μs) the repetition rate of single laser pulses can be adjusted between 30 and 1000 kHz. The average power per burst is about 5 kW at the maximum energy of 4 J/burst. The pulse duration of a single pulse can be adjusted from the ps- to ns-range. We have examined the EUV-emission from the Xe-cluster target within one burst of the laser as a function of single pulse intensity and repetition rate. Based on the measured EUV-spectra the conversion efficiency at 13.4 nm wavelength in dependence on pulse duration in the range from 30 ps to 3 ns were estimated.
- Published
- 2002