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1. Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material

Author

Arie Ruzin, Maurice Glaser, and F. Lemeilleur

Subjects
Materials science, Silicon, Physics::Instrumentation and Detectors, Annealing (metallurgy), Radiochemistry, Metallurgy, chemistry.chemical_element, Radiation, Oxygen, chemistry.chemical_compound, Chemical species, chemistry, Silicon carbide, High Energy Physics::Experiment, Carbon, Radiation hardening
Abstract

Recent results on the radiation hardness of silicon detectors fabricated on gloat zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 collaboration, which is studying the radiation hardening of silicon detectors.

Published
1999
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