Search

Your search keyword '"Eric Verhoeven"' showing total 5 results
Start Over Author "Eric Verhoeven" Publisher spie
5 results on '"Eric Verhoeven"'

2. 0.33 NA EUV systems for high-volume manufacturing

Author

Eric Verhoeven, Ron Schuurhuis, Marcel Mastenbroek, Peter Jonkers, Frank Bornebroek, Arthur Minnaert, Harrie Van Dijck, Parham Yaghoobi, Geert Fisser, Payam Tayebati, Klaus Hummler, and Roderik Van Es

Published
2021

3. 0.33 NA EUV systems for High Volume Manufacturing

Author

Payam Tayebati, Geert Fisser, Frank Bornebroek, Marcel Mastenbroek, Ron Schuurhuis, Roderik van Es, Arthur Winfried Eduardus Minnaert, Peter Gerardus Jonkers, Eric Verhoeven, Harrie van Dijck, Martijn Leenders, and Parham Yaghoobi

Subjects
Resist, Computer science, Extreme ultraviolet lithography, Node (circuits), Overlay, Lithography, Critical dimension, Dram, High volume manufacturing, Reliability engineering
Abstract

In 2019 we have seen the first 7 nm logic devices, manufactured on ASML NXE:3400 scanners, hitting the market. In this paper we will give an update on the performance improvements to further optimize these systems for High Volume Manufacturing (HVM), related to the lithographic performance, productivity and uptime. We will also demonstrate that for the 5 nm logic node and 10nm-class DRAM, excellent overlay, focus, and critical dimension (CD) control have been realized. In combination with intrinsic tool stability and holistic control schemes, including (resist and tool) performance improvements addressing stochastics issues, this provides the required performance for HVM for these nodes. Finally we will discuss the ASML roadmap for meeting the requirements for the 3 nm node and beyond.

Published
2020

4. EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update

Author

Leon Martin Levasier, Jos de Klerk, Arthur Winfried Eduardus Minnaert, Roderik van Es, Mark van de Kerkhof, Geert Fisser, Hans Meiling, Rudy Peeters, Marco Pieters, Joost Smits, Eric Verhoeven, and Roel Moors

Subjects
010302 applied physics, Scanner, business.industry, Computer science, Extreme ultraviolet lithography, Node (networking), Volume (computing), 02 engineering and technology, Overlay, 021001 nanoscience & nanotechnology, 01 natural sciences, 0103 physical sciences, 0210 nano-technology, business, Throughput (business), Critical dimension, Lithography, Computer hardware
Abstract

With the introduction of its fifth-generation NXE:3400B scanner, ASML brought EUV to High- Volume Manufacturing for 7 nm node lithography and beyond with full support of pellicle. This paper presents an update on lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour. Advances in source power and system availability have enabled a continued increase of productivity. To maximize the number of yielding dies per day excellent Overlay, Focus, and Critical Dimension (CD) control have been realized, combining intrinsic tool stability with holistic control schemes. We will also show matching performance for both Overlay and Imaging, and further improvements in Focus Process Dependencies for the 5nm node.

Published
2018

5. Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)

Author

Y. C. Ku, Takuya Mori, Chris de Ruiter, Greet Storms, Guo-Tsai Huang, Jon Wu, Christophe Fouquet, Kelvin Pao, Charlie Chen, Tatung Chow, C. W. Hsieh, Jacky Huang, KS Chen, T. S. Gau, Martijn van Veen, Martijn Maassen, Reinder Teun Plug, Pu Li, Chih-Ming Ke, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Hua Xu, Maurits van de Schaar, Kai-Hsiung Chen, Youping Zhang, Kaustuve Bhattacharyya, Yi-Yin Chen, Gary Zhang, Eric Verhoeven, and Steffen Meyer

Subjects
Diffraction, Computer science, Electronic engineering, Multiple patterning, Process control, Nanotechnology, Node (circuits), Product (category theory), Focus (optics), Lithography, Metrology
Abstract

In order to meet current and future node overlay, CD and focus requirements, metrology and process control performance need to be continuously improved. In addition, more complex lithography techniques, such as double patterning, advanced device designs, such as FinFET, as well as advanced materials like hardmasks, pose new challenges for metrology and process control. In this publication several systematic steps are taken to face these challenges.

Published
2014

Catalog

Books, media, physical & digital resources
See catalog results