1. Comparison of physical gate-CD with in-die at-speed non-contact measurements for bin-yield and process optimization
- Author
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James S. Vickers, Mario M. Pelella, G. Johnson, Nader Pakdaman, P. Gros, M. Babazadeh, J. Galvier, G. Steinbrueck, W. Doedel, M. Gatefait, B. Borot, and Pascal Gouraud
- Subjects
Physics ,Yield (engineering) ,business.product_category ,business.industry ,Bin ,Computational physics ,Length measurement ,Volume (thermodynamics) ,Die (manufacturing) ,Process optimization ,Wafer ,Sensitivity (control systems) ,business ,Telecommunications - Abstract
We report on a performance-based measurement (PBM) technique from a volume production 65-nm multi-product wafer (MPW) process that shows far more sensitivity than the standard physical gate-length (CD) measurements. The performance (the electrical "effective" gate length, L eff ) variation results measured by PBM can NOT be explained alone by CD (physical gate) measurement and show that the non-destructive (non-contact) PBM is able to monitor and control at first-level of electrical connectivity (≥ M1), the bin-yield determining in-die variation that are NOT captured or realized by physical CD measurement. Along with this higher sensitivity, we also show that the process-induced variation (excursion) has a distinct signature versus "nominal" expected behavior.
- Published
- 2009
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