19 results on '"Tsatsulnikov, A. F."'
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2. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
3. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
4. InGaN/GaN heterostructures grown by submonolayer deposition
5. Monolithic white LEDs: Approaches, technology, design
6. Specific features of gallium nitride selective epitaxy in round windows
7. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
8. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
9. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
10. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
11. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
12. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
13. Indium-rich island structures formed by in-situ nanomasking technology
14. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
15. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
16. AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz
17. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
18. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
19. High growth rate of AlN in a planetary MOVPE reactor
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