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The article presents an overview of a tutorial course which focuses on the important phenomena of spinelectronics and some models in spintronics including the giant magnetoresistance (GMR). Accordingly, several experiments have been made to stimulate spin polarized electrons from a magnetic metal into semiconductors but were unsuccessful due to the density of the semiconductor and the magnetic metal. It references the study of G. Schmidt and colleagues which pointed out the impossibility of injecting spin polarized electrons from a magnetic field directly into a semiconductor.

The article discusses the course subject on magnetism which focuses on the discovery and development of spintronic devices for memory and logical applications which include the giant magnetoresistance, low magnetic film sensors, and Magnetoresistive Random Access Memory (MRAM). It notes that the discovery of the ways to manipulate the magnetization of nanostructure through a spin-polarized current offers a major breakthrough in the development of spinelectronics. It adds that electrical currents may have a direct influence on the propagation of domain walls and spin-transfer effects.