1. Influence of Bi on dielectric properties of GaAs1−xBix alloys
- Author
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Ayse Erol, D. Deger, Sahin Yakut, Kemal Turker Ulutas, Deniz Bozoglu, M. Arslan, Ulutas, K, Yakut, S, Bozoglu, D, Deger, D, Arslan, M, Erol, A, Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü, Arslan, Mustafa, and Erol, Atila
- Subjects
010302 applied physics ,Materials science ,Mechanical Engineering ,Materials Science ,gaas1−xbix ,02 engineering and technology ,Dielectric ,dielectric modulus ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Nanomaterials ,Condensed Matter::Materials Science ,alloys ,Mechanics of Materials ,dielectric properties ,0103 physical sciences ,TA401-492 ,General Materials Science ,Composite material ,0210 nano-technology ,Materials of engineering and construction. Mechanics of materials - Abstract
Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature.
- Published
- 2019