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We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444 kW cm(-2) and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.

We report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ∼7 GPa. The GaN NW lasers, with heights of 4-5 μm and diameters ∼140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ∼40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values, revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. This approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.

We demonstrate that interferometric lithography offers a fast, simple route to nanostructured self-assembled monolayers of alkylphosphonates on the native oxide of titanium. Exposure at 244 nm using a Lloyd's mirror interferometer caused the spatially periodic photocatalytic degradation of the adsorbates, yielding nanopatterns that extended over square centimetre areas. Exposed regions were re-functionalised by a second, contrasting alkylphosphonate, and the resulting patterns were used as templates for the assembly of molecular nanostructures; we demonstrate the fabrication of lines of polymer nanoparticles 46 nm wide. Nanopatterned monolayers were also employed as resists for etching of the metal film. Wires were formed with widths that could be varied between 46 and 126 nm simply by changing the exposure time. Square arrays of Ti dots as small as 35 nm (λ/7) were fabricated using two orthogonal exposures followed by wet etching.