1. Influence of hole transport material ionization energy on the performance of perovskite solar cells
- Author
-
Demetra Tsokkou, Michele Sessolo, Benedikt Dänekamp, Henk J. Bolink, Verena Brehm, Natalie Banerji, Nikolaos Droseros, and Pablo P. Boix
- Subjects
Materials science ,Open-circuit voltage ,business.industry ,Halide ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,7. Clean energy ,01 natural sciences ,0104 chemical sciences ,law.invention ,law ,Solar cell ,Materials Chemistry ,Valence band ,Optoelectronics ,Charge carrier ,Ionization energy ,0210 nano-technology ,business ,Materials ,HOMO/LUMO ,Cèl·lules fotoelèctriques ,Perovskite (structure) - Abstract
Halide perovskites have shown excellent photophysical properties for solar cell applications which led to a rapid increase of the device efficiency. Understanding the charge carrier dynamics within the active perovskite absorber and at its interfaces will be key to further progress in their development. Here we present a series of fully evaporated devices employing hole transport materials with different ionization energies. The open circuit voltage of the devices, along with their ideality factors, confirm that the former is mainly determined by the bulk and surface recombination in the perovskite, rather than by the energetic offset between the valence band of the perovskite and the highest occupied molecular orbital of the organic transport layers. These results help to further understand the origin of the open circuit potential in perovskite solar cells, which is an important parameter that needs to be improved to further boost power conversion efficiencies.
- Published
- 2019